HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Huihua Cheng;Jing Wang;James Kelly;Afesomeh Ofiare;Stephen Thoms;Chong Li
{"title":"HEMT With Ultralow Contact Resistance by Room Temperature Process With One-Step EBL T-Shape Gates for Subterahertz Applications: Design, Fabrication, and Characterization","authors":"Huihua Cheng;Jing Wang;James Kelly;Afesomeh Ofiare;Stephen Thoms;Chong Li","doi":"10.1109/TED.2024.3499935","DOIUrl":null,"url":null,"abstract":"We present the design, fabrication, and characterization of InGaAs channel high electron mobility transistors (HEMTs) with ultralow contact resistance for millimeter-wave and subterahertz applications. The HEMT has a composite InGaAs channel and a 50-nm T-shaped gate, which was realized through a single-step electron beam lithography (EBL) process. A room temperature ohmic contact fabrication process achieving the lowest contact resistance of 15 m\n<inline-formula> <tex-math>$\\Omega \\cdot $ </tex-math></inline-formula>\n mm has been developed with all room temperature process. The I–V measurements of the HEMTs at room temperature revealed a peak drain current of 0.75 A/mm and a transconductance of 1.4 S/mm. In standard 50-\n<inline-formula> <tex-math>$\\Omega ~{S}$ </tex-math></inline-formula>\n-parameter measurements, the HEMTs exhibited a maximum gain of 10 dB at 170 GHz. However, utilizing an active load-pull measurement, the 50-nm HEMT shows a gain of 14.5 dB at 170 GHz and 2 dB at 270 GHz. The load-pull measurements also obtained power added efficiency (PAE) and 1-dB compression point of the HEMTs. The noise performance was characterized using a noise parameter system with source tuner between 2 and 50 GHz. A drift-diffusion model was used to benchmark the dc and RF performance of the devices, and good agreements have been achieved.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"142-146"},"PeriodicalIF":2.9000,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10787438/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

We present the design, fabrication, and characterization of InGaAs channel high electron mobility transistors (HEMTs) with ultralow contact resistance for millimeter-wave and subterahertz applications. The HEMT has a composite InGaAs channel and a 50-nm T-shaped gate, which was realized through a single-step electron beam lithography (EBL) process. A room temperature ohmic contact fabrication process achieving the lowest contact resistance of 15 m $\Omega \cdot $ mm has been developed with all room temperature process. The I–V measurements of the HEMTs at room temperature revealed a peak drain current of 0.75 A/mm and a transconductance of 1.4 S/mm. In standard 50- $\Omega ~{S}$ -parameter measurements, the HEMTs exhibited a maximum gain of 10 dB at 170 GHz. However, utilizing an active load-pull measurement, the 50-nm HEMT shows a gain of 14.5 dB at 170 GHz and 2 dB at 270 GHz. The load-pull measurements also obtained power added efficiency (PAE) and 1-dB compression point of the HEMTs. The noise performance was characterized using a noise parameter system with source tuner between 2 and 50 GHz. A drift-diffusion model was used to benchmark the dc and RF performance of the devices, and good agreements have been achieved.
亚太赫兹应用的一步EBL t形栅极室温超低接触电阻HEMT:设计、制造和表征
我们介绍了用于毫米波和次太赫兹应用的具有超低接触电阻的InGaAs通道高电子迁移率晶体管(hemt)的设计,制造和表征。HEMT具有复合InGaAs通道和50 nm t形栅极,通过单步电子束光刻(EBL)工艺实现。在全室温条件下,开发了一种接触电阻最低为15 m $\Omega $ cdot $ mm的室温欧姆接触制造工艺。hemt在室温下的I-V测量结果显示,峰值漏极电流为0.75 a /mm,跨导为1.4 S/mm。在标准的50- $\Omega ~{S}$参数测量中,hemt在170 GHz时显示出10 dB的最大增益。然而,利用主动负载-拉力测量,50nm HEMT在170 GHz和270 GHz下的增益分别为14.5 dB和2 dB。负载-拉力测量还获得了hemt的功率附加效率(PAE)和1 db压缩点。采用源调谐器在2 ~ 50 GHz范围内的噪声参数系统对其噪声性能进行了表征。采用漂移扩散模型对器件的直流和射频性能进行了基准测试,得到了较好的结果。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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