Advanced Bragg Resonator Integration for Enhanced Bandwidth and Stability in G-Band TWT With Staggered Double Vane Structure

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-18 DOI:10.1109/TED.2024.3509384

Junyoung Lee;Hong Eun Choi;Wonjin Choi;EunMi Choi

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Abstract

This article presents the design and analysis of a wideband staggered double vane (SDV) sheet-beam-based traveling-wave tube (TWT) for stable amplification in the G-band. Unlike conventional SDV structures, which often suffer from oscillations within the interaction region due to upper and lower cutoff regions, our design employs several key innovations to overcome these limitations. First, the newly designed filter configuration effectively eliminates oscillations within the interaction region. Second, the shape of the Bragg resonator is modified to a diamond configuration, which significantly enhanced impedance matching around 200 GHz, ensuring broader bandwidth and improved transmission characteristics. Finally, we discuss the advantages of E-plane fabrication compared to H-plane fabrication and presents a study on the design of an E-plane filter structure that is feasible for manufacturing. Particle-in-cell (PIC) simulations and experimental validations confirm that our proposed design achieves a 40 GHz 3 dB bandwidth and stable operation without oscillations, demonstrating its potential for high-performance millimeter-wave (mmWave) applications.

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先进的Bragg谐振器集成在交错双叶片结构的g波段行波管中增强带宽和稳定性

本文介绍了一种用于g波段稳定放大的宽带交错双叶片（SDV）板波束行波管（TWT）的设计和分析。与传统的SDV结构不同，由于上截止区和下截止区，SDV结构在相互作用区域内经常受到振荡的影响，我们的设计采用了几个关键的创新来克服这些限制。首先，新设计的滤波器结构有效地消除了相互作用区域内的振荡。其次，将Bragg谐振器的形状修改为菱形结构，显著增强了200 GHz左右的阻抗匹配，确保了更宽的带宽并改善了传输特性。最后，我们讨论了e -平面制造相对于h -平面制造的优势，并提出了一种可行的e -平面滤波器结构设计研究。粒子池（PIC）仿真和实验验证证实，我们提出的设计实现了40 GHz 3db带宽和稳定的无振荡运行，展示了其在高性能毫米波（mmWave）应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.