Investigation of a Double-Negative Metamaterial-Loaded Helical Slow-Wave Structure: Equivalent Circuit Analysis Approach

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-04 DOI:10.1109/TED.2024.3502034

Aditya Singh Thakur;Meenakshi Rawat;Manfred Thumm;M. V. Kartikeyan

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Abstract

This article presents a comprehensive theoretical investigation into a double-negative metamaterial (MTM)-loaded helical slow-wave structure (DNM-HSWS) employing an equivalent circuit analysis (ECA) approach considering the sheath-helix model of the helix. The study involves deriving dispersion and interaction impedance formulations, with a focus on analyzing the propagation and interaction characteristics of the structure. The practically feasible DNM-HSWS is designed and analyzed using CST-microwave studio software. A comparative analysis is conducted between theoretical and simulation results for the designed CST model, verifying the accuracy of the proposed theoretical investigation for the DNM-HSWS. Beyond validation, this study highlights the practical utility of the proposed theoretical investigations and the designed DNM-HSWS within the domain of MTM-inspired vacuum electron device (VED) applications. The findings contribute to advancing the understanding and application of MTM-loaded structures for improved performance in microwave devices.

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双负负载超材料螺旋慢波结构的研究：等效电路分析方法

本文采用等效电路分析（ECA）方法对双负超材料（MTM）加载的螺旋慢波结构（DNM-HSWS）进行了全面的理论研究，并考虑了螺旋的鞘-螺旋模型。研究包括推导色散和相互作用阻抗公式，重点分析结构的传播和相互作用特性。利用cst微波工作室软件对实际可行的DNM-HSWS进行了设计和分析。对设计的CST模型进行了理论与仿真对比分析，验证了DNM-HSWS理论研究的准确性。除了验证之外，本研究还强调了提出的理论研究和设计的DNM-HSWS在mtm激发的真空电子器件（VED）应用领域的实际效用。这些发现有助于促进对mtm负载结构的理解和应用，以提高微波器件的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.