Impact of Scaling Thickness on the Ferroelectric Properties of Pt/Al₀.₈Sc₀.₂N/Pt Capacitors

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-04 DOI:10.1109/TED.2024.3506513

Xiaoxi Li;Yuan Fang;Jiuren Zhou;Bochang Li;Zhifan Wu;Cizhe Fang;Xiangyu Zeng;Siying Zheng;Wei Mao;Yue Hao;Yan Liu;Genquan Han

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Abstract

In this work, the effects of reducing the thickness of Al0.8Sc0.2N films from 100 to 40 nm on the ferroelectric properties of Pt/Al0.8Sc0.2N/Pt capacitors were investigated. As Al0.8Sc0.2N film thickness decreases, remanent polarization significantly drops, and coercive field (

${E}_{\text {c}}$

) increases, which origins from the diminished c-axis orientation and reduced crystalline size. Piezoresponse force microscopy results confirm polarization switching in all films, with thinner films exhibiting larger

${E}_{\text {c}}$

and lower initial polarization. Notably, the thinner films show the lower leakage current, attributed to a decrease in nitrogen vacancies. Moreover, thinner Al0.8Sc0.2N films exhibit better endurance performance, with a maximum switching cycle of

$10^{{5}}$

cycles achieved for the 40-nm Al0.8Sc0.2N film. These results underscore the critical role of film thickness in optimizing aluminum scandium nitride (AlScN) thin films for high-performance ferroelectric applications, providing crucial insights for future device development.

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结垢厚度对Pt/Al₀₈Sc₀铁电性能的影响。₂N / Pt电容器

本文研究了将Al0.8Sc0.2N薄膜厚度从100 nm减小到40 nm对Pt/Al0.8Sc0.2N/Pt电容器铁电性能的影响。随着Al0.8Sc0.2N薄膜厚度的减小，残余极化明显减小，矫顽场（${E}_{\text {c}}$）增大，其原因是c轴取向减小，晶粒尺寸减小。压电响应力显微镜结果证实了所有薄膜的极化开关，薄膜越薄，初始极化越小，${E}_{\text {c}}$越大。值得注意的是，由于氮空位的减少，更薄的薄膜显示出更低的泄漏电流。此外，更薄的Al0.8Sc0.2N薄膜表现出更好的续航性能，40纳米Al0.8Sc0.2N薄膜的最大开关周期为10^{{5}}$。这些结果强调了薄膜厚度在优化氮化铝钪（AlScN）薄膜用于高性能铁电应用中的关键作用，为未来器件的开发提供了重要的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.