Ultrafast Characteristics of Integrated High-Power Photoconductive Semiconductor Switch Based on 4H-SiC Substrate

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-11-12 DOI:10.1109/TED.2024.3492149

Yangfan Li;Longfei Xiao;Chongbiao Luan;Xun Sun;Huiru Sha;Jian Jiao;Biao Yang;Deqiang Li;Yan Qin;Xiufang Chen;Hongtao Li;Xiangang Xu

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引用次数: 0

Abstract

To minimize the rise time and full-width at half-maximum (FWHM) of the output waveform, we have designed and fabricated a novel integrated device based on semi-insulated silicon carbide (SiC) material, which we call cPCSS device, whose structure includes a photoconductive semiconductor switch (PCSS) and a charging capacitor. Test results indicate that, owing to optimized circuit connections and a simplified electrical length in cPCSS, the parasitic capacitance and inductance in the test circuit are decreased. Consequently, the cPCSS device exhibits faster signal while maintaining basically equal conductivity. At the incident laser energy (

$10~\mu $

J), cPCSS obtains the output signal with the fastest rise time of 122 ps (10%–90%) and FWHM of 375 ps. In addition, the cPCSS device can maintain a peak output voltage exceeding 10 kV and continuously output signals for more than 180 000 times without any faults.

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基于4H-SiC衬底的集成大功率光导半导体开关的超快特性

为了最大限度地减少输出波形的上升时间和半最大值全宽（FWHM），我们设计并制造了一种基于半绝缘碳化硅（SiC）材料的新型集成器件，我们称之为cPCSS器件，其结构包括光导半导体开关（PCSS）和充电电容器。测试结果表明，通过优化电路连接和简化电路长度，降低了测试电路中的寄生电容和电感。因此，cPCSS器件显示更快的信号，同时保持基本相等的电导率。在入射激光能量（$10~\mu $ J）下，cPCSS器件获得的输出信号最快上升时间为122ps (10% ~ 90%)， FWHM为375ps，输出峰值电压可保持在10kv以上，连续输出信号18万次以上，无故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.