Total Ionizing Dose Effects of β-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-12-13 DOI:10.1109/TED.2024.3505847

Weili Fu;Teng Ma;Yuangang Wang;Xing Li;Zhifeng Lei;Jinbin Wang;Hongjia Song;Chao Peng;Zhangang Zhang;Hong Zhang;Liang He;Tao Xiao;Daoyou Guo;Xiangli Zhong

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引用次数: 0

Abstract

This article focuses on investigating the total ionizing dose (TID) effects of

$\beta $

-Ga2O3-based Schottky barrier diodes (SBDs). The TID degradation behavior and mechanisms are evaluated by varying irradiation bias conditions, conducted through dc, capacitance–voltage (C–V), and low-frequency noise (LFN) measurements. At a dose of 1 Mrad(Si), the irradiated devices demonstrate a noticeable increase in both forward and reverse currents. This increase is primarily attributed to the rise in defect concentration caused by ionizing damage resulting from TID effects. The TID degradation of

$\beta $

-Ga2O3 SBD is significantly influenced by bias conditions, with devices under high electric fields experiencing more severe degradation. Specifically, a high reverse electric field during radiation leads to a notable increase in interface defects of

$\beta $

-Ga2O3 SBDs, this result was validated through TCAD simulation. The reverse bias voltage exacerbates TID effects and reduces the radiation tolerance of

$\beta $

-Ga2O3 SBD devices.

查看原文本刊更多论文

β-Ga₂O₃肖特基势垒二极管在不同偏置条件下的总电离剂量效应

本文主要研究了$\beta $ - ga2o3基肖特基势垒二极管（sbd）的总电离剂量效应。通过直流、电容电压（C-V）和低频噪声（LFN）测量，通过不同的辐照偏置条件来评估TID的降解行为和机制。在1mrad （Si）的剂量下，辐照器件显示出正向和反向电流的显著增加。这种增加主要归因于由TID效应引起的电离损伤引起的缺陷浓度上升。偏置条件显著影响$\beta $ -Ga2O3 SBD的TID降解，其中高电场下器件的降解更为严重。其中，在高反电场作用下，$\beta $ -Ga2O3 sbd的界面缺陷显著增加，这一结果通过TCAD仿真得到了验证。反向偏置电压加剧了TID效应，降低了$\beta $ -Ga2O3 SBD器件的辐射容限。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.