Highly Robust p-GaN Gate HEMT With Surge-Energy Ruggedness Under Unclamped Inductive Switching and UV Pulse Laser Irradiation

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Feng Zhou;Tianyang Zhou;Can Zou;Rong Yu;Junfan Qian;Weizong Xu;Fangfang Ren;Dong Zhou;Dunjun Chen;Youdou Zheng;Rong Zhang;Hai Lu
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Abstract

The robustness of non-avalanche p-GaN gate HEMTs against dynamic overvoltage ( ${V}_{\text {over.}}\text {)}$ and transient surge-energy ( ${E}_{\text {sur.}}\text {)}$ shocks is critical for device applications, especially for high-power switching applications. In this work, by carefully constructing an energy dissipating passage from the drain to the source, the proposed device successfully possesses the ability to withstand dynamic overvoltage and safely dissipate surge energy, achieving a maximum ${V}_{\text {over.}}$ of 1.85 kV and an ${E}_{\text {sur.}}$ of 11.7 J/cm2, setting a performance record for GaN-based devices. Furthermore, the device sustains over 1-million times repeated UIS energy shocks, revealing strong robustness. In particular, under extreme conditions of UV pulse laser irradiation and inductive transient, the device still exhibits notable survivability. These results reveal the great potential of non-avalanche p-GaN HEMTs with surge energy dissipating and overvoltage sustaining capabilities for high-power switching applications.
在无箝位电感开关和紫外脉冲激光照射下具有浪涌能量坚固性的高鲁棒p-GaN栅极HEMT
非雪崩p-GaN栅极hemt对动态过电压(${V}_{\text {over)的鲁棒性。}}\text{)}$和瞬态浪涌能量(${E}_{\text {sur。}}\text{)}$冲击对于器件应用,特别是大功率开关应用至关重要。在这项工作中,通过精心构建从漏极到源极的能量耗散通道,所提出的器件成功地具有承受动态过电压和安全地耗散浪涌能量的能力,实现了最大${V}_{\text {over。${E}_{\text {sur。}}$为11.7 J/cm2,创下了基于gan的器件的性能记录。此外,该设备可承受超过100万次的重复美国能量冲击,显示出强大的稳健性。特别是在紫外脉冲激光照射和感应瞬态的极端条件下,该器件仍然表现出显著的生存性。这些结果揭示了具有浪涌能量耗散和过压维持能力的非雪崩p-GaN hemt在高功率开关应用中的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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