Large Lateral Photovoltaic Effect and Spatial Resistance Effect on MoS₂/p-Si Interface

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-11 DOI:10.1109/LED.2024.3495674

Kang’an Jiang;Su Hu;Zhiyan Zheng;Zhuyikang Zhao;Dehui Huang;Shuai Liu;Heyu Shen;Hui Wang

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引用次数: 0

Abstract

An in-depth study of new phenomena emerging from the interaction between light and matter is a vital scientific research effort. In this report, we investigate the lateral photovoltaics and spatial resistance on p-Si surfaces under 520 nm laser stimulation. Because of the surface states of p-Si, the lateral photovoltage sensitivity can reach 286 mV/mm, and the spatial resistance change ratio can reach 1059%. Then, we modulate these two effects by growing three different morphologies of MoS2 on the Si surface. Due to the photosensitive properties of MoS2 nanoparticles, the lateral photovoltage sensitivity can be enhanced up to 368 mV/mm, while the spatial resistance change ratio can reach 2202%. In this process, we observe a new phenomenon that the p-Si surface modified by MoS2 no longer shows the traditional bipolar-resistance effect, and the laser position corresponding to the minimum resistance has been shifted. Based on this finding, we refine the previously proposed bipolar-resistance effect theory and confirm our findings through theoretical calculations. Our modulation strategy can realize both photovoltage-based detection and photoconductivity-based detection, which provides a reliable reference for the study of photoelectric devices.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.