Buried Interface Bilayer Engineering Toward High Efficiency and Stable Perovskite Modules

Abstract

The inferior buried film crystallinity and interface recombination have severely limited the development of large-area perovskite modules. Buried interface engineering and energy alignment engineering are critical to achieving high efficiency and stable perovskite modules. Herein, we present a hole transport bilayer to improve the buried perovskite film contact and large-area perovskite film uniformity. The self-assembled monolayer (SAM) layer of Me-4PACz was introduced to modify the surface of PTAA, resulting in the improved buried film contact and better energy alignment. The hole transport bilayers exhibit hole-extraction capacity and high conductance. As a result, the blade-coated state-of-the-art cells realize an impressive efficiency of 23.52% and a high efficiency of 20.18% for inverted perovskite modules with an aperture area of 65 cm2. Moreover, the improved buried film and suppressed interface non-radiative recombination are beneficial to enhance the film and device stability. Our works provide an effective strategy to promote the manufacturing application of the large-area perovskite modules.