Suppressing the Dark Current of PbS QD SWIR Photodetector by Freeze-Treated Hole Transport Layer

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-12 DOI:10.1109/LED.2024.3496412

Fan Fang;Weichao Wang;Yiwen Li;Xiao Wang;Lihai Xu;Simin Chen;Tao Cao;Haibo Zhu;Lei Rao;Kaiyu Luo;Jun Tang;Yulong Chen;Junjie Hao;Wei Chen;Haodong Tang

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引用次数: 0

Abstract

Lead sulfide (PbS) quantum dot (QD) photodetector is considered as a key component of the next-generation infrared machine vision applications for its wide detection range and effective fabrication cost. Leakage current caused by film cracks and trap states during the film fabrication stops the further optimization of device performance and slows down the industrialization of the PbS QD photodetector. An optimized hole transport layer based on PbS QD with minimized cracks and trap states is achieved through a freeze-centrifugation purification before the ligand-exchange process, leading to a suppressed dark current density (260 nA/cm

$^{{2}}\text {)}$

, strongly reduced noise current (26 fA/Hz

$^{{1}{/{2}}}\text {)}$

. Enhanced film quality brings an ultra-high detectivity (

${5}.{47}\times {10} ^{{12}}$

Jones) and faster response-time (

$1.4\mu$

s) of the freeze-treated photodetector under zero bias.

查看原文本刊更多论文

冻干空穴传输层抑制PbS QD SWIR光电探测器暗电流

硫化铅量子点光电探测器以其广泛的探测范围和有效的制造成本被认为是下一代红外机器视觉应用的关键组成部分。在薄膜制作过程中，由于薄膜裂纹和陷阱态产生的漏电流阻碍了器件性能的进一步优化，减缓了PbS量子点光电探测器的工业化进程。通过配体交换过程前的冷冻离心净化，获得了一个基于PbS QD的优化空穴传输层，该空穴传输层具有最小的裂纹和陷阱状态，从而抑制了暗电流密度（260 nA/cm $^{{2}}\text{）}$，显著降低了噪声电流（26 fA/Hz $^{{1}{/{2}}}\text{）}$。增强的胶片质量带来了超高的探测能力。{47}\ × {10} ^{{12}}$ Jones)和更快的响应时间（$1.4\mu$ s）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.