E-Mode AlN/GaN HEMTs on Si With 80.4% PAE at 3.6 GHz for Low-Supply-Voltage RF Power Applications

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-11 DOI:10.1109/LED.2024.3495672

Guangjie Gao;Zhihong Liu;Lu Hao;Fang Zhang;Xiaojin Chen;Hanghai Du;Weichuan Xing;Hong Zhou;Jincheng Zhang;Yue Hao

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引用次数: 0

Abstract

Enhancement-mode (E-mode) AlN/GaN high electron mobility transistors (HEMTs) with a 160-nm T- shape recessed gate on a silicon substrate were fabricated. The fabricated device has a

${V}_{\text {TH}}$

of +0.35 V, and shows a maximum drain current (

${I}_{\text {DMAX}}\text {)}$

of 1.58 A/mm, a low on- resistance (

${R}_{\text {ON}}\text {)}$

$1.8~\Omega \cdot $

mm, and a peak transconductance (

${G}_{\text {MMAX}}\text {)}$

over 580 mS/mm. A cut-off frequency (

${f}_{\text {T}}\text {)}$

of 85 GHz and a maximum oscillation frequency (

${f}_{\max }\text {)}$

of 75 GHz were obtained. Load pull continuous-wave (CW) power sweep measurement at 3.6 GHz demonstrated a peak power-added-efficiency (PAE) of 71.4% and a saturated output power density (

${P}_{\text {out}}\text {)}$

of 0.70 W/mm at

${V}_{\text {DS}}=6$

V. At 3.6 GHz pulsed wave (PW) power sweep at

${V}_{\text {DS}}=6$

V the device demonstrated an 80.4% PAE and 0.5 W/mm associated

${P}_{\text {out}}$

. These results promises the great potential of E-mode AlN/GaN HEMTs with gate recess in the applications of low supply voltage RF power applications.

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E-Mode AlN/GaN HEMTs on Si，在3.6 GHz下具有80.4% PAE，用于低电源电压射频电源应用

在硅衬底上制备了具有160 nm T型凹槽栅的增强模式（E-mode） AlN/GaN高电子迁移率晶体管（hemt）。该器件的电压${V}_{\text {TH}}$为+0.35 V，最大漏极电流${I}_{\text {DMAX}}\text {)}$为1.58 a /mm，导通电阻${R}_{\text {ON}}\text {)}$为$1.8~\Omega \cdot $ mm，峰值跨导${G}_{\text {MMAX}}\text {)}$超过580 mS/mm。截止频率${f}_{\text {T}}\text {)}$为85 GHz，最大振荡频率${f}_{\max }\text {)}$为75 GHz。负载拉连续波（CW）在3.6 GHz下的功率扫描测量显示，峰值功率附加效率（PAE）为71.4% and a saturated output power density ( ${P}_{\text {out}}\text {)}$ of 0.70 W/mm at ${V}_{\text {DS}}=6$ V. At 3.6 GHz pulsed wave (PW) power sweep at ${V}_{\text {DS}}=6$ V the device demonstrated an 80.4% PAE and 0.5 W/mm associated ${P}_{\text {out}}$ . These results promises the great potential of E-mode AlN/GaN HEMTs with gate recess in the applications of low supply voltage RF power applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.