Improved Memory Performance Through Integration of Ferroelectric and Ovonic Threshold Switching Layer

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-14 DOI:10.1109/LED.2024.3497957

Laeyong Jung;Jangseop Lee;Seungyeol Oh;Yoori Seo;Ohhyuk Kwon;Hyunsang Hwang

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Abstract

In this study, we explore the combined effects of a ferroelectric (FE) layer with an ovonic threshold switching (OTS) layer to enhance the performance of memory devices. Initially, to enlarge memory window, an FE layer was used to induce bidirectional shifts in the threshold voltage (V

$_{\text {th}}\text {)}$

of OTS. This polarization-induced modulation led to an additional memory window compared to a case where the applied polarization field was not applied. Subsequently, to enhance the reliability, FE layer’s persistent field was leveraged for mitigating the OTS layer’s effective electric field. This polarization field served as an additional pulse scheme, thereby reducing the relaxation effect of traps and improving drift. Finally, our findings demonstrated FE layer’s capability to facilitate multi-level states via adjustable polarization and a large memory window. We also examined the integration with a selenium-based selector only memory (SOM) device, where we observed a notable enhancement in memory window, exceeding 2 V. These findings suggest the potential for significant improvements in SOM by strategically integrating FE and OTS layers.

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通过铁电和卵形阈值交换层的集成提高存储器性能

在本研究中，我们探讨了铁电（FE）层和卵泡阈值开关（OTS）层的联合作用，以提高存储器件的性能。最初，为了扩大存储窗口，使用FE层诱导OTS的阈值电压（V $_{\text {th}}\text{）}$的双向移位。与不施加极化场的情况相比，这种极化诱导调制导致了额外的存储窗口。随后，为了提高可靠性，利用FE层的持久场来减轻OTS层的有效电场。该极化场作为一种附加脉冲方案，从而减少了陷阱的弛豫效应，改善了漂移。最后，我们的发现证明了FE层能够通过可调节的极化和大的存储窗口来促进多级状态。我们还研究了与基于硒的选择器存储器（SOM）器件的集成，在那里我们观察到存储器窗口的显着增强，超过2 V。这些发现表明，通过战略性地整合FE和OTS层，可以显著改善SOM。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.