Utilization of Graphite Nanoparticles as a Hybrid Hole Transport Layer in Non-Fullerene Organic Solar Cells

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-07 DOI:10.1109/JEDS.2024.3475513

Magaly Ramírez-Como;Monica M. Valdez-Mata;Angel Sacramento;José L. Casas-Espínola;Luis Reséndiz;Lluis F. Marsal

{"title":"Utilization of Graphite Nanoparticles as a Hybrid Hole Transport Layer in Non-Fullerene Organic Solar Cells","authors":"Magaly Ramírez-Como;Monica M. Valdez-Mata;Angel Sacramento;José L. Casas-Espínola;Luis Reséndiz;Lluis F. Marsal","doi":"10.1109/JEDS.2024.3475513","DOIUrl":null,"url":null,"abstract":"This study investigates the impact of incorporating graphite nanoparticles (GNPs) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as hybrid hole transport layer (HTL) in non-fullerene organic solar cells (NF-OSCs) based on PBDB-T-2F:BTP-4CL. The concentration of GNPs in the PEDOT:PSS layer was varied to investigate their impact on the overall device behavior. The PCE initially increased with the GNPs concentration up to 5% v/v, reaching a maximum enhancement of 6.43%, which was attributed to the increased JSC. Current-voltage measurements and Mott-Schottky analysis through capacitance-voltage characteristics were conducted to evaluate the behavior of the charge recombination and built-in potential due to the concentration variation of the GNPs into PEDOT:PSS. This study illustrates the potential of GNPs to improve OSC performance through enhanced light absorption, reduced recombination losses, and improved charge carrier transport, indicating promising prospects for GNPs on interface layers in OSCs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"1044-1050"},"PeriodicalIF":2.0000,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10706788","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10706788/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This study investigates the impact of incorporating graphite nanoparticles (GNPs) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as hybrid hole transport layer (HTL) in non-fullerene organic solar cells (NF-OSCs) based on PBDB-T-2F:BTP-4CL. The concentration of GNPs in the PEDOT:PSS layer was varied to investigate their impact on the overall device behavior. The PCE initially increased with the GNPs concentration up to 5% v/v, reaching a maximum enhancement of 6.43%, which was attributed to the increased JSC. Current-voltage measurements and Mott-Schottky analysis through capacitance-voltage characteristics were conducted to evaluate the behavior of the charge recombination and built-in potential due to the concentration variation of the GNPs into PEDOT:PSS. This study illustrates the potential of GNPs to improve OSC performance through enhanced light absorption, reduced recombination losses, and improved charge carrier transport, indicating promising prospects for GNPs on interface layers in OSCs.

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石墨纳米颗粒作为杂化空穴传输层在非富勒烯有机太阳能电池中的应用

本文研究了将石墨纳米粒子（GNPs）加入聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）中作为杂化空穴传输层（HTL）在PBDB-T-2F:BTP-4CL基非富勒烯有机太阳能电池（NF-OSCs）中的影响。通过改变PEDOT:PSS层中GNPs的浓度来研究它们对器件整体性能的影响。当GNPs浓度达到5% v/v时，PCE开始增加，达到6.43%的最大值，这归因于JSC的增加。通过电流-电压测量和电容-电压特性的Mott-Schottky分析来评估GNPs进入PEDOT:PSS的浓度变化对电荷重组和内置电位的影响。本研究说明了GNPs通过增强光吸收、减少复合损失和改善载流子输运来改善OSC性能的潜力，表明GNPs在OSC界面层上的应用前景广阔。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.