Simultaneous Dual-Frequency High-Power Microwave Generation in a Relativistic Transit-Time Oscillator for X-Band and Ka-Band: Preliminary Experimental Study

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-22 DOI:10.1109/LED.2024.3505136

Xingfu Gao;Liili Song;Junpu Ling;Xinbing Cheng;Rong Chen;Lei Wang;Juntao He

{"title":"Simultaneous Dual-Frequency High-Power Microwave Generation in a Relativistic Transit-Time Oscillator for X-Band and Ka-Band: Preliminary Experimental Study","authors":"Xingfu Gao;Liili Song;Junpu Ling;Xinbing Cheng;Rong Chen;Lei Wang;Juntao He","doi":"10.1109/LED.2024.3505136","DOIUrl":null,"url":null,"abstract":"This letter presents the experimental validation of a dual-frequency high-power microwave (HPM) source utilizing a relativistic transit-time oscillator (RTTO), which achieves simultaneous output in the X-band and Ka-band. To enhance measurement precision and signal isolation between the dual-frequency HPM outputs, a band-pass filter was introduced into the Ka-band measurement system. The device exhibits a compact nested structure and operates stably at a voltage of 440 kV with a low guiding magnetic field of 0.6 T, while generating output powers of 1.1 GW in the X-band and 0.25 GW in the Ka-band, with pulse widths of 80 ns and 28 ns, respectively. The generated microwave modes have been confirmed as symmetric TM\n<inline-formula> <tex-math>$_{\\text {0{n}}}$ </tex-math></inline-formula>\n by conducting mode analysis, validating stable operation of the device. The experimental results substantiate that the device efficiently generates dual-frequency HPMs under low magnetic field conditions, presenting distinct advantages in compactness and lightweight dual-frequency HPM source design. Future work will focus on improving the device’s stability and output efficiency, thereby enhancing its practicality and reliability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"103-106"},"PeriodicalIF":4.1000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10764715/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This letter presents the experimental validation of a dual-frequency high-power microwave (HPM) source utilizing a relativistic transit-time oscillator (RTTO), which achieves simultaneous output in the X-band and Ka-band. To enhance measurement precision and signal isolation between the dual-frequency HPM outputs, a band-pass filter was introduced into the Ka-band measurement system. The device exhibits a compact nested structure and operates stably at a voltage of 440 kV with a low guiding magnetic field of 0.6 T, while generating output powers of 1.1 GW in the X-band and 0.25 GW in the Ka-band, with pulse widths of 80 ns and 28 ns, respectively. The generated microwave modes have been confirmed as symmetric TM

$_{\text {0{n}}}$

by conducting mode analysis, validating stable operation of the device. The experimental results substantiate that the device efficiently generates dual-frequency HPMs under low magnetic field conditions, presenting distinct advantages in compactness and lightweight dual-frequency HPM source design. Future work will focus on improving the device’s stability and output efficiency, thereby enhancing its practicality and reliability.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.