Simultaneous Dual-Frequency High-Power Microwave Generation in a Relativistic Transit-Time Oscillator for X-Band and Ka-Band: Preliminary Experimental Study

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-22 DOI:10.1109/LED.2024.3505136

Xingfu Gao;Liili Song;Junpu Ling;Xinbing Cheng;Rong Chen;Lei Wang;Juntao He

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Abstract

This letter presents the experimental validation of a dual-frequency high-power microwave (HPM) source utilizing a relativistic transit-time oscillator (RTTO), which achieves simultaneous output in the X-band and Ka-band. To enhance measurement precision and signal isolation between the dual-frequency HPM outputs, a band-pass filter was introduced into the Ka-band measurement system. The device exhibits a compact nested structure and operates stably at a voltage of 440 kV with a low guiding magnetic field of 0.6 T, while generating output powers of 1.1 GW in the X-band and 0.25 GW in the Ka-band, with pulse widths of 80 ns and 28 ns, respectively. The generated microwave modes have been confirmed as symmetric TM

$_{\text {0{n}}}$

by conducting mode analysis, validating stable operation of the device. The experimental results substantiate that the device efficiently generates dual-frequency HPMs under low magnetic field conditions, presenting distinct advantages in compactness and lightweight dual-frequency HPM source design. Future work will focus on improving the device’s stability and output efficiency, thereby enhancing its practicality and reliability.

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在x波段和ka波段相对论跃迁时间振荡器中同时产生双频大功率微波：初步实验研究

本文介绍了利用相对论跃迁时间振荡器（RTTO）实现x波段和ka波段同步输出的双频大功率微波（HPM）源的实验验证。为了提高测量精度和双频HPM输出之间的信号隔离，在ka波段测量系统中引入了带通滤波器。该器件具有紧凑的嵌套结构，在440 kV电压和0.6 T的低引导磁场下稳定工作，在x波段和ka波段分别产生1.1 GW和0.25 GW的输出功率，脉冲宽度分别为80 ns和28 ns。通过模态分析，确认生成的微波模态为对称的TM $_{\text {0{n}}}$，验证了器件的稳定运行。实验结果表明，该器件在低磁场条件下能有效地产生双频HPM，在双频HPM源设计上具有明显的紧凑和轻量化优势。未来的工作重点是提高器件的稳定性和输出效率，从而增强其实用性和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.