{"title":"Unveiling the Role of Local Stress in Enhancing Ferroelectric Properties and Endurance of HfO₂/ZrO₂ Superlattice Structures","authors":"Boyao Cui;Sheng Ye;Xuepei Wang;Maokun Wu;Yuchun Li;Yishan Wu;Yichen Wen;Jinhao Liu;Xiaoxi Li;Pengpeng Ren;Zhigang Ji;Hongliang Lu;David Wei Zhang;Runsheng Wang;Ru Huang","doi":"10.1109/LED.2024.3496720","DOIUrl":null,"url":null,"abstract":"Ferroelectric superlattices (SL) composed of HfO2 and ZrO2 have garnered significant interest due to their outstanding performance. In this letter, we revealed that the SL structure facilitates ferroelectric excitation by introducing local stress compared to solid solution (SS) HZO. This additional stress results in an earlier saturation of polarization during annealing process and thus less annealing time is needed for SL. The thermal defects (e.g. oxygen vacancy) are effectively mitigated, leading to a remarkable improvement in endurance simultaneously. The precise modulation of local stress achieved through stack engineering unlocks vast potential for ferroelectric devices, enabling them to exhibit superior ferroelectricity and unprecedented reliability.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 1","pages":"107-110"},"PeriodicalIF":4.1000,"publicationDate":"2024-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10750837/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Ferroelectric superlattices (SL) composed of HfO2 and ZrO2 have garnered significant interest due to their outstanding performance. In this letter, we revealed that the SL structure facilitates ferroelectric excitation by introducing local stress compared to solid solution (SS) HZO. This additional stress results in an earlier saturation of polarization during annealing process and thus less annealing time is needed for SL. The thermal defects (e.g. oxygen vacancy) are effectively mitigated, leading to a remarkable improvement in endurance simultaneously. The precise modulation of local stress achieved through stack engineering unlocks vast potential for ferroelectric devices, enabling them to exhibit superior ferroelectricity and unprecedented reliability.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.