Unprecedented High Efficiency of Porous Silicon-Based Electron Emitter Achieved Through Electrochemical Oxidation

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-22 DOI:10.1109/LED.2024.3505134

He Li;Li Sailei;Luo Wei;Li Jie

引用次数: 0

Abstract

The demand for efficient electron sources in vacuum microelectronics is rising as devices become smaller and more integrated. Post-oxidation is an efficient method for passivating porous silicon (PS) to enhance the field emission performance of the PS-based electron emitter. This study reveals that electrochemical oxidation (ECO) in constant-voltage (CV) mode promotes more efficient and uniform oxidation of the PS layer without generating any surface crevices, as compared to the constant-current (CC) mode. The

$11~\mu $

m thick PS layer, oxidized by the CV mode at 50 V for 20 min, achieves an unprecedented emission efficiency of 16.8% at a bias voltage of 28 V, positioning it as a promising on-chip electron source for future applications.

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通过电化学氧化实现前所未有的高效率多孔硅基电子发射器

随着器件的小型化和集成化，真空微电子领域对高效电子源的需求日益增加。后氧化是一种有效的钝化多孔硅（PS）以提高其场发射性能的方法。该研究表明，与恒流（CC）模式相比，恒压（CV）模式下的电化学氧化（ECO）可以促进PS层更有效和均匀的氧化，而不会产生任何表面裂缝。该11~\mu $ m厚的PS层经CV模式在50 V下氧化20 min，在28 V偏置电压下实现了前所未有的16.8%的发射效率，使其成为未来应用前景广阔的片上电子源。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.