Unprecedented High Efficiency of Porous Silicon-Based Electron Emitter Achieved Through Electrochemical Oxidation

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-11-22 DOI:10.1109/LED.2024.3505134

He Li;Li Sailei;Luo Wei;Li Jie

引用次数: 0

Abstract

The demand for efficient electron sources in vacuum microelectronics is rising as devices become smaller and more integrated. Post-oxidation is an efficient method for passivating porous silicon (PS) to enhance the field emission performance of the PS-based electron emitter. This study reveals that electrochemical oxidation (ECO) in constant-voltage (CV) mode promotes more efficient and uniform oxidation of the PS layer without generating any surface crevices, as compared to the constant-current (CC) mode. The

$11~\mu $

m thick PS layer, oxidized by the CV mode at 50 V for 20 min, achieves an unprecedented emission efficiency of 16.8% at a bias voltage of 28 V, positioning it as a promising on-chip electron source for future applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.