Magneto-transport properties of NiCoCrFePd high entropy alloy films

IF 10 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Abid Hussain , S.A. Khan , Anju Kumari , R.C. Meena , Sanjay K. Kedia , Deeksha Khandelwal , P.K. Kulriya
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Abstract

This study aims to develop for the first time thin films of NiCoCrFePd high entropy alloy (HEA) to investigate the structural, magnetic, and transport properties for potential room temperature spin gapless semiconducting (SGS) applications. The as grown films were subjected to different annealing temperatures ranging from 400 °C to 600 °C to investigate the role of thermal generation of charge carriers and its effect on the (SGS) properties. The temperature dependent X-ray diffraction unveils structural stability down to 30 K with no phase transformations, however improvement in the crystallinity was observed with the increase in the annealing temperature. Rutherford backscattering spectroscopy shows depth dependent uniformity in the elemental distribution. Additionally, the magneto-transport studies revealed ferromagnetic behavior with a magnetic saturation values ranging from 165 emu/cm3 to 375 emu/cm3 and the Curie temperatures in the range of 263 K to 507 K. Further, the resistivity measurements confirmed a semiconducting behavior, with negative magnetoresistance corresponding to all the annealed samples. A two-channel conduction mechanism is used to explain the transport behaviour with one gapless and another gapped channel with activation energies ranging from 216.47 ± 3.63 meV to 86.85 ± 0.93 meV for different annealed samples. The observation of small anomalous Hall conductivity ranging from 25.2 Scm−1 to 66.7 Scm−1 and vanishing thermoelectric power lying in the range 3.11 μV/K to 4.11 μV/K confirms the SGS behavior with hole-dominant charge carriers. Thus, evidently the annealing temperature can be used to tune the spin transport properties by altering energy band gaps and density of states near the Fermi energy (εF).
NiCoCrFePd高熵合金薄膜的磁输运特性
本研究旨在首次开发NiCoCrFePd高熵合金(HEA)薄膜,以研究其结构、磁性和输运性质,用于潜在的室温自旋无间隙半导体(SGS)应用。在400 ~ 600℃的不同退火温度下,研究热生成载流子的作用及其对(SGS)性能的影响。温度相关的x射线衍射揭示了低至30k的结构稳定性,没有相变,但结晶度随着退火温度的升高而改善。卢瑟福后向散射光谱显示出元素分布随深度的均匀性。此外,磁输运研究表明,磁饱和值在165 ~ 375 emu/cm3之间,居里温度在263 ~ 507 K之间。此外,电阻率测量证实了半导体行为,与所有退火样品对应的负磁电阻。采用双通道传导机制解释了不同退火样品在216.47±3.63 meV至86.85±0.93 meV之间的无间隙通道和有间隙通道的输运行为。观察到微小的异常霍尔电导率(25.2 ~ 66.7 cm-1)和消失热电功率(3.11 ~ 4.11 μV/K),证实了空穴优势载流子的SGS行为。因此,显然退火温度可以通过改变能带间隙和费米能()附近的态密度来调节自旋输运性质。
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来源期刊
Materials Today Physics
Materials Today Physics Materials Science-General Materials Science
CiteScore
14.00
自引率
7.80%
发文量
284
审稿时长
15 days
期刊介绍: Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.
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