Steep‐Slope IGZO Transistor Monolithically Integrated with Initialization‐Free Ag/Ti/Hf0.8Zr0.2O2 Atomic Threshold Switch

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-12-26 DOI:10.1002/aelm.202400780

Junmo Park, Hanggyo Jung, Deokjoon Eom, Heesoo Lee, Hyunhee Kim, Yonghoon Kim, Jongwook Jeon, Hyoungsub Kim

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引用次数: 0

Abstract

A steep‐slope In‐Ga‐Zn‐O (IGZO) field‐effect transistor (FET) monolithically integrated with an Ag/Ti/Hf0.8Zr0.2O2 atomic threshold switch (ATS) device is presented, which allows switching below the Boltzmann limit of 60 mV dec−1 at room temperature (25 °C). The low‐temperature processable IGZO FET is combined with the Hf0.8Zr0.2O2‐based ATS device, which featured initialization‐free and low‐voltage switching, to achieve an ultra‐low power device solution with back‐end‐of‐line process compatibility (≤400 °C). To further assess the potential of the ATS‐IGZO FET devices for circuit applications, they are applied to logic and memory integrated circuits. Inverter ring oscillator simulations are performed to investigate the relationship between switching speed and power consumption. In addition, static random‐access memory simulations are performed to verify that ATS‐IGZO FETs can achieve a stable noise margin along with low standby power consumption. This comprehensive evaluation provides an in‐depth assessment of the applicability of ATS‐IGZO FETs for ultra‐low power logic and memory applications, highlighting their potential for substantial performance improvements.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.