Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-09-30 DOI:10.1109/TDMR.2024.3468013

Shengwei Gao;Xiaoyu Fu;Xingtao Sun;Tian Jinrui;Yesen Han

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引用次数: 0

Abstract

GaN HEMT devices have wide application prospects because of their high electron mobility and excellent electrical characteristics. However, due to the lack of reliability analysis of the switching characteristics, GaN HEMT devices are unable to realize their maximum potential in practical applications. In this paper, GaN HEMT devices are aged based on power cycling. The switching degradation behavior of GaN HEMT devices after aging is characterized by double pulse test. The test results show that the switching delay increases, the Miller platform lengthens, and the opening ringing decreases after power cycle aging. In order to explore the degradation mechanism, the effects of parasitic capacitance on the switching characteristics are characterized by double pulse test of parallel capacitors. Based on the analysis of the parasitic capacitance model, the degradation trend of each parasitic capacitance caused by trap after aging is deduced and verified by experiment. The results show that the trap increase of AlGaN layer caused by inverse piezoelectric effect and hot-electron effect is the main reason for the change of parasitic capacitance after aging, while the on-state and off-state capacitance of GaN HEMT devices have completely different composition mechanism and change trends, which lead to different trends and degrees of degradation of each switching characteristic. This can provide a valuable reference for the reliability of GaN HEMT devices in long-term applications.

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功率循环老化下GaN HEMT开关特性退化研究

GaN HEMT器件具有高电子迁移率和优异的电学特性，具有广泛的应用前景。然而，由于缺乏对开关特性的可靠性分析，GaN HEMT器件在实际应用中无法发挥其最大潜力。在本文中，GaN HEMT器件是基于功率循环老化的。通过双脉冲测试，表征了GaN HEMT器件老化后的开关退化行为。试验结果表明：功率循环老化后，开关延时增大，米勒平台变长，开孔振铃减小。为探讨寄生电容对并联电容器开关特性的影响机理，采用双脉冲试验方法研究了寄生电容对并联电容器开关特性的影响。在分析寄生电容模型的基础上，推导了老化后陷阱引起的各寄生电容的退化趋势，并通过实验进行了验证。结果表明，逆压电效应和热电子效应引起的AlGaN层陷阱增加是老化后寄生电容变化的主要原因，而GaN HEMT器件的导通和关断电容具有完全不同的组成机制和变化趋势，导致各开关特性的退化趋势和程度不同。这可以为GaN HEMT器件在长期应用中的可靠性提供有价值的参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.