Improving Single-Event Effect Performance of SiC MOSFET by Excess Hole Extraction

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-09-19 DOI:10.1109/TDMR.2024.3463698

Shiwei Liang;Yu Yang;Jiaqi Chen;Lei Shu;Liang Wang;Jun Wang

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引用次数: 0

Abstract

Heavy ion strike-induced Single-Event Effect (SEE) is an essential reliability issue for SiC MOSFETs in radiation environments. The mass clustering of excess charges in SiC MOSFET is found to be root cause for device failure when heavy ion strikes. Based on the SEE failure mechanism, a planar gate SiC MOSFET with Hole Extraction Channel (HEC-MOS) and current aperture structure to improve its SEE immunity and electrical performance is proposed in this paper. The embedded

$P^{+}$

pillar provides an additional path to extract excess holes during heavy ion radiation so that transient currents and SEE response time are greatly reduced. As a result, the maximum lattice temperature (hot spot) decreases by 768K, and a single-event burnout (SEB) threshold voltage of 624V is achieved with linear energy transfer (LET) value of 75MeV

$\cdot $

cm2/mg for HEC-MOS, which is 1.4 times higher than conventional SiC MOSFET (Conv-MOS). Moreover, the gate oxide electric field also decreases ~10 times owing to much less clustered holes in JFET region, which ensures HEC-MOS superior immunity to single-event gate rupture (SEGR). Apart from improving SEE performance, a better trade-off with its electrical performances is also considered. By adopting optimized parameters in current spreading layers and P+ pillar, the specific ON-resistance of HEC-MOS is reduced by 17.5% while maintain a good forward blocking capability and SEB immunity. Therefore, HEC-MOS is a promising candidate for harsh environmental applications.

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利用多余空穴提取提高SiC MOSFET单事件效应性能

重离子撞击引起的单事件效应（SEE）是辐射环境下碳化硅mosfet的重要可靠性问题。发现SiC MOSFET中过量电荷的大量聚集是重离子撞击时器件失效的根本原因。基于SEE的失效机理，提出了一种采用孔提取通道（HEC-MOS）和电流孔径结构的平面栅极SiC MOSFET，以提高其SEE抗扰度和电性能。嵌入的$P^{+}$柱提供了在重离子辐射期间提取多余空穴的额外路径，从而大大减少了瞬态电流和SEE响应时间。结果表明，HEC-MOS的最高晶格温度（热点）降低了768K，单事件燃尽（SEB）阈值为624V，线性能量转移（LET）值为75MeV $\cdot $ cm2/mg，比传统的SiC MOSFET （convo - mos）高1.4倍。此外，由于JFET区域的簇状空穴较少，栅极氧化物电场也降低了约10倍，这确保了HEC-MOS具有良好的抗单事件栅极破裂（SEGR）的能力。除了提高SEE性能外，还考虑了电气性能的更好权衡。通过优化电流扩散层和P+柱的参数，HEC-MOS的比on电阻降低了17.5%，同时保持了良好的正向阻断能力和SEB抗扰性。因此，HEC-MOS是恶劣环境应用的有前途的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.