Analysis of Thermal Expansion Behavior and Interface Evolution of TSV Under Thermal Cycle Loading Based on Crystal Plastic Finite Element Method

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-10-10 DOI:10.1109/TDMR.2024.3478183

Kaihong Hou;Zhengwei Fan;Xun Chen;Shufeng Zhang;Yashun Wang;Yu Jiang

引用次数: 0

Abstract

As a key vertical interconnection microstructure, Through-Silicon Via (TSV) plays an important role in three-dimension (3D) chips. The reliability issues of TSV are becoming more and more prominent in the increasingly harsh service environment, and the failure behavior of TSV under thermal cycle loading is the one to be solved urgently. In this study, the thermal expansion behavior and microstructure evolution along different paths and interfaces of TSV under thermal cycle loading are investigated base on Crystal Plasticity Element Method (CPFEM). Results reveal the evolution law of TSV grains and grain boundaries. The mechanical response along different path and interface of TSV is also clarified. Relevant results are expected to provide a certain reference for the failure analysis of TSV.

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基于晶体塑性有限元法的TSV热循环载荷下热膨胀行为及界面演化分析

作为一种关键的垂直互连结构，TSV在三维芯片中起着重要的作用。在日益恶劣的服役环境中，TSV的可靠性问题日益突出，热循环载荷作用下TSV的失效行为是迫切需要解决的问题。基于晶体塑性元法（CPFEM）研究了热循环载荷下TSV沿不同路径和界面的热膨胀行为和微观结构演变。结果揭示了TSV晶粒和晶界的演化规律。阐明了TSV沿不同路径和界面的力学响应。相关研究结果有望为TSV的失效分析提供一定的参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.