Total Ionizing Dose Effects on DC/RF Performances of Emerging Vertical Back-Gate CMOS Platform

IF 2.5 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Device and Materials Reliability Pub Date : 2024-11-01 DOI:10.1109/TDMR.2024.3488750

Yue Ma;Jinshun Bi;Biyao Zhao;Linjie Fan;Jianjian Wang;Gangping Yan;Ziming Xu;Baihong Chen;Hanying Deng;Zhiqiang Li;Viktor Stempitsky

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引用次数: 0

Abstract

As the scaling down of the silicon (Si)-based transistors is reaching its physical limits, the vertical-structure complementary metal-oxide-semiconductor (VCMOS) process has emerged as a promising technology due its comparative advantages, in terms of aggressive scalability. Along these lines, in this work, an emerging nano-scale vertical back-gate (VBG) CMOS platform with gate length depending on the deposition process instead of the accuracy of the lithography process was proposed. In addition, the total ionizing dose (TID) effects on both the direct current and radio frequency characteristics of the proposed VBG MOSFETs were investigated by performing technology computer aided design (TCAD) simulations. Besides, a high integration-density inverter was implemented by the VBG CMOS platform as well. Both the DC and transient performances of the proposed inverter under TID effects were also characterized. From the simulated results it was demonstrated that although the VBG CMOS platform has the potential to be applied in digital integrated circuits (ICs) and RF ICs, the sensitivity to TID is still a problem to be mitigated. This work provides valuable guidelines for the TID-hardened design of VBG MOSFETs and circuits.

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来源期刊

IEEE Transactions on Device and Materials Reliability 工程技术-工程：电子与电气

CiteScore

4.80

自引率

5.00%

发文量

审稿时长

6-12 weeks

期刊介绍： The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.