Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory†

IF 5.7 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Junghyeon Hwang, Hunbeom Shin, Chaeheon Kim, Jinho Ahn and Sanghun Jeon
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Abstract

Ferroelectric materials, characterized by their polarization switching capabilities, have emerged as promising candidates for non-volatile memory applications due to their fast operation speeds, low switching energies, and remarkable scalability. Among these, hafnia-based ferroelectrics are particularly noted for their compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, the development of high-quality ferroelectricity in ultra-thin films, essential for low-voltage operations and high-density integrations, remains challenging. This study introduces a novel low-damage metallization process designed to fabricate ultra-thin (sub-5 nm) ferroelectric films exhibiting exceptional ferroelectric properties and reliability. The process, compatible with standard CMOS techniques, achieves a significant remnant polarization (Pr) of 40 µC cm−2 and low leakage currents, alongside enhanced retention characteristics. Crucially, it substantially mitigates the wake-up effect, often attributed to oxygen vacancy redistribution at the interface. Through comprehensive analyses utilizing electron energy loss spectroscopy (EELS), geometric phase analysis (GPA) and X-ray photoelectron spectroscopy (XPS), we demonstrate that our process effectively reduces oxygen vacancies and dislocations at the top interface of the ferroelectric film. The enhanced reliability of ferroelectric random-access memory (FeRAM), evidenced by improved sensing margins and consistency in ferroelectric properties, marks a substantial improvement over the conventional method. To precisely measure reliability characteristics, we propose a new retention model that considers charge screening over time. Moreover, circuit-level simulations via non-volatile memory simulator (NVSim) validate the process's integration potential with existing CMOS technologies, affirming its suitability for advanced, high-density memory configurations without compromising performance or energy efficiency. The findings from this study pave the way for broader applications of nanoscale high-quality dielectric thin films, extending beyond ferroelectric materials to various technological domains requiring advanced material solutions.

Abstract Image

在随机存取存储器中实现高铁电性和可靠性的损伤缓解策略
铁电材料以其极化开关能力为特征,由于其快速的操作速度、低的开关能量和显著的可扩展性,已成为非易失性存储器应用的有希望的候选者。其中,铪基铁电体尤其以其与互补金属氧化物半导体(CMOS)技术的兼容性而闻名。然而,超薄膜中高质量铁电的发展,对于低压操作和高密度集成至关重要,仍然具有挑战性。本研究介绍了一种新的低损伤金属化工艺,旨在制造超薄(亚5纳米)铁电薄膜,具有优异的铁电性能和可靠性。该工艺与标准CMOS技术兼容,实现了40µC cm−2的显著残余极化(Pr)和低泄漏电流,同时增强了保持特性。至关重要的是,它大大减轻了唤醒效应,通常归因于界面上氧空位的重新分配。通过电子能量损失谱(EELS)、几何相位分析(GPA)和x射线光电子能谱(XPS)的综合分析,我们证明了我们的工艺有效地减少了铁电膜顶部界面的氧空位和位错。铁电随机存取存储器(FeRAM)的可靠性得到了提高,其传感裕度和铁电性能的一致性得到了改善,这标志着该方法比传统方法有了实质性的改进。为了精确地测量可靠性特性,我们提出了一个新的保留模型,该模型考虑了随时间的电荷筛选。此外,通过非易失性存储器模拟器(NVSim)进行的电路级仿真验证了该工艺与现有CMOS技术的集成潜力,确认了其在不影响性能或能效的情况下适用于高级高密度存储器配置。这项研究的发现为纳米级高质量介电薄膜的更广泛应用铺平了道路,从铁电材料扩展到需要先进材料解决方案的各种技术领域。
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来源期刊
Journal of Materials Chemistry C
Journal of Materials Chemistry C MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
10.80
自引率
6.20%
发文量
1468
期刊介绍: The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study: Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability. Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine. Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices. Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive. Bioelectronics Conductors Detectors Dielectrics Displays Ferroelectrics Lasers LEDs Lighting Liquid crystals Memory Metamaterials Multiferroics Photonics Photovoltaics Semiconductors Sensors Single molecule conductors Spintronics Superconductors Thermoelectrics Topological insulators Transistors
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