Yueteng Zhang, Xue Bai, Heping Zhao, Jianbei Qiu, Zhiguo Song, Jiayan Liao and Zhengwen Yang
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引用次数: 0
Abstract
This study explored the innovative photochromic and photoluminescence properties of Eu3+-doped LiNbO3 phosphors under X-ray irradiation, demonstrating their great potential for anti-counterfeiting, X-ray detection and imaging. The photochromic phosphor LiNbO3:Eu3+ is synthesized, which undergoes a color change from white to brown under bright field conditions and displays red photoluminescence under dark field conditions after X-ray exposure due to defect formation. The addition of Eu3+ enhanced the photochromic reaction and rapid self-bleaching ability. The study delved into the mechanisms of photochromic and photoluminescence behavior, focusing on electron–hole pair separation and defect formation, which are central to the observed phenomena. In addition, the integration of these phosphors into polydimethylsiloxane can create multifunctional anti-counterfeiting labels and can also be used for “dual-mode” 3D X-ray imaging and detection, showing practical application potential.
期刊介绍:
The Journal of Materials Chemistry is divided into three distinct sections, A, B, and C, each catering to specific applications of the materials under study:
Journal of Materials Chemistry A focuses primarily on materials intended for applications in energy and sustainability.
Journal of Materials Chemistry B specializes in materials designed for applications in biology and medicine.
Journal of Materials Chemistry C is dedicated to materials suitable for applications in optical, magnetic, and electronic devices.
Example topic areas within the scope of Journal of Materials Chemistry C are listed below. This list is neither exhaustive nor exclusive.
Bioelectronics
Conductors
Detectors
Dielectrics
Displays
Ferroelectrics
Lasers
LEDs
Lighting
Liquid crystals
Memory
Metamaterials
Multiferroics
Photonics
Photovoltaics
Semiconductors
Sensors
Single molecule conductors
Spintronics
Superconductors
Thermoelectrics
Topological insulators
Transistors