{"title":"A 0.41-ns CLK-OUT Delay, 0.22-μVrms Input-Referred Noise CMOS Integration Dynamic Comparator With Flipping Capacitor for Charge Reuse","authors":"Kwok Cheong Li;Xinhang Xu;Jihang Gao;Siyuan Ye;Jiajia Cui;Yacong Zhang;Ru Huang;Linxiao Shen","doi":"10.1109/LSSC.2024.3510389","DOIUrl":null,"url":null,"abstract":"A high-speed and power-efficient CMOS integration dynamic comparator is presented. Low-input-referred noise is accomplished by CMOS integration. To achieve low-power consumption, a charge-reusing scheme by flipping the flying capacitors across the pMOS/nMOS integration nodes is introduced. The 22-nm prototype achieves a 0.22-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\nVrms input-referred noise with an energy consumption of 227-fJ per conversion, which is improved by \n<inline-formula> <tex-math>$2\\times $ </tex-math></inline-formula>\n compared with the StrongARM counterpart in the same process. Furthermore, with the latch stage embedded, the achieved 0.41-ns CLK-OUT delay shows an over \n<inline-formula> <tex-math>$20\\times $ </tex-math></inline-formula>\n improvement compared with the existing works with CMOS integration.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"5-8"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10772614/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
A high-speed and power-efficient CMOS integration dynamic comparator is presented. Low-input-referred noise is accomplished by CMOS integration. To achieve low-power consumption, a charge-reusing scheme by flipping the flying capacitors across the pMOS/nMOS integration nodes is introduced. The 22-nm prototype achieves a 0.22-
$\mu $
Vrms input-referred noise with an energy consumption of 227-fJ per conversion, which is improved by
$2\times $
compared with the StrongARM counterpart in the same process. Furthermore, with the latch stage embedded, the achieved 0.41-ns CLK-OUT delay shows an over
$20\times $
improvement compared with the existing works with CMOS integration.