{"title":"A Bifunctional Tunneling Device for Photodetection and Electroluminescence Using van der Waals Heterostructure","authors":"Zi-hao Dong, Qi-hang Zhang, Kai Liu, Shao-jie Fu, Xu-Hao Hong, Qian-jin Wang, Yan-qing Lu, Yong-yuan Zhu, Xue-jin Zhang","doi":"10.1002/aelm.202400558","DOIUrl":null,"url":null,"abstract":"Two-dimensional (2D) materials are widely used in various optical, electronic, and optoelectronic devices. However, the realization of visible light emission and near-infrared photodetection functions in a single device remains a challenge. Here, an integrated dual-functional device is developed by manipulating the excitons of WS<sub>2</sub> within a graphene/hBN/WS<sub>2</sub>/graphene heterostructure. When operating as a photodetector at low external bias, the dark current is well suppressed by the hBN layer. With the excellent two-photon absorption (TPA) property of monolayer WS<sub>2</sub>, the photoresponse range of the photodetector can be extended to the near-infrared region, achieving a responsivity of up to 0.19 mA/W at 1145 nm. At high external bias, the device can work in light-emitting mode, in which the electroluminescence (EL) wavelength can be tuned via gate voltage. This atomically thin device opens up possibilities for applications in miniaturized display, sensing, and monitoring systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"119 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400558","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Two-dimensional (2D) materials are widely used in various optical, electronic, and optoelectronic devices. However, the realization of visible light emission and near-infrared photodetection functions in a single device remains a challenge. Here, an integrated dual-functional device is developed by manipulating the excitons of WS2 within a graphene/hBN/WS2/graphene heterostructure. When operating as a photodetector at low external bias, the dark current is well suppressed by the hBN layer. With the excellent two-photon absorption (TPA) property of monolayer WS2, the photoresponse range of the photodetector can be extended to the near-infrared region, achieving a responsivity of up to 0.19 mA/W at 1145 nm. At high external bias, the device can work in light-emitting mode, in which the electroluminescence (EL) wavelength can be tuned via gate voltage. This atomically thin device opens up possibilities for applications in miniaturized display, sensing, and monitoring systems.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.