A 15.4-ppm/°C GaN-Based Voltage Reference With Process-Variation-Immunity and High PSR for Electric Vehicle Power Systems

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-12-02 DOI:10.1109/LSSC.2024.3510597

Po-Jui Chiu;Chi-Yu Chen;Xiao-Quan Wu;Yu-Ting Huang;Tz-Wun Wang;Sheng-Hsi Hung;Ke-Horng Chen;Kuo-Lin Zheng;Chih-Chen Li

引用次数: 0

Abstract

The proposed gallium nitride (GaN)-based voltage reference (

$V_{\mathrm { REF}}$

) generator has a low temperature coefficient (TC) of 15.4 ppm/°C, small

$V_{\mathrm { REF}}$

deviation at different process corners (standard deviation of 0.22%), line sensitivity as low as 0.0023%/V, and high power supply rejection (PSR) of −187 and −114 dB at 100 Hz and 50 MHz, respectively. The proportional-to-absolute-temperature (PTAT) gate current for enhancement-mode GaN (eGaN) optimizes TC. Eliminating depletion-mode GaN (dGaN) gate leakage and using multiple stacked composite dGaNs can improve line regulation and PSR. All performance is achieved with a low power consumption of

$10.9~\mu $

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一种15.4 ppm/°C、过程抗扰度和高PSR的基于gan的电动汽车电源基准电压

所提出的基于氮化镓（GaN）的参考电压发生器（$V_{\ maththrm {REF}}$）具有15.4 ppm/°C的低温系数（TC），在不同工艺角的$V_{\ maththrm {REF}}$偏差较小（标准差为0.22%），线路灵敏度低至0.0023%/V，在100 Hz和50 MHz时电源抑制（PSR）分别为- 187和- 114 dB。增强模式GaN （eGaN）的比例-绝对温度（PTAT）栅极电流优化了TC。消除耗尽型GaN （dGaN）栅极泄漏和使用多个堆叠的复合dGaN可以改善线路调节和PSR。所有的性能都是在低功耗10.9~\mu $ W的情况下实现的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量