Short-Term and Long-Term Memory Functionality of a Brain-Like Device Built from Nanoparticle Atomic Switch Networks (Adv. Electron. Mater. 12/2024)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-12-10 DOI:10.1002/aelm.202470039

Oradee Srikimkaew, Saman Azhari, Deep Banerjee, Yuki Usami, Hirofumi Tanaka

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Abstract

Brain-Like Device Built from Nanoparticle Atomic Switch Networks

In article number 2400360, Hirofumi Tanaka and co-workers demonstrate the synaptic plasticity of an Ag–Ag₂S nanoparticle-based memristor network, in which over a thousand interconnected atomic switches mimic biological learning. Short-term plasticity emerges through spontaneous conductance relaxation, while repeated pulse stimulation transitions the device into a state of long-term potentiation, analogous to memory formation. With a retention time of 40 minutes, this network also exhibits a forgetting process similar to human memory, advancing our understanding of neuromorphic systems and paving the way for hardware-based artificial neural networks.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.