A Solid-State Pulsed Power Generator With Chip-on-Board Packaging SiC-Based Switching Module

IF 1.3 4区 物理与天体物理 Q3 PHYSICS, FLUIDS & PLASMAS
Diangeng Li;Zicheng Zhang;Jingming Gao;Yijie Sun;Juntao He
{"title":"A Solid-State Pulsed Power Generator With Chip-on-Board Packaging SiC-Based Switching Module","authors":"Diangeng Li;Zicheng Zhang;Jingming Gao;Yijie Sun;Juntao He","doi":"10.1109/TPS.2024.3455573","DOIUrl":null,"url":null,"abstract":"The solid-state pulsed power generators (PPGs) are widely used in various modern industrial applications for their high repetition rate and long lifetime. The output characteristics of the generators are significantly affected by the dynamic characteristics of the semiconductor switches. Wide bandgap (WBG) semiconductor power devices, such as silicon carbide metal-oxide–semiconductor field-effect transistors (SiC MOSFETs), have the potential to structure solid-state PPGs due to many advantages, such as a high rated voltage, low ON-resistance, high operational temperature, and fast switching speed. Typically, these devices are used in series/parallel connections to enhance the power level of the generators. However, this approach often leads to increased parasitic inductance of the switching modules, which results in flattened rising edges of the output pulse and reduced power transmission efficiency. The chip-on-board (COB) packaging method exhibits excellent high-frequency performance by allowing current paths to be more flexible, which is suitable for constructing the power module. This article proposes a solid-state PPG with Blumlein pulse forming network (BPFN) and COB packaging SiC-based switching module. The switching module is based on a four-layer printed circuit board (PCB). SiC MOSFET bare dies, gate drivers, and auxiliary elements are directly soldered on the top layer of the PCB. Separate conducting layers are connected to the terminals of the switching module by vias, which provides extra flexibility in designing and enables the stray inductance of the power loop to be minimized to 5.14 nH by optimizing the current communication loops. A 5-kV prototype of the solid-state PPG is fabricated based on the designed switching module. Under a resistive load of \n<inline-formula> <tex-math>$2.8~\\Omega $ </tex-math></inline-formula>\n, a quasi-square pulse with a 62-ns pulsewidth and a 45-ns rise time can be obtained. Additionally, this generator has been tested at a 500-Hz repetition rate in the burst mode, and the di/dt of the switching module is about 80 A/ns, proving the effectiveness of the solid-state PPG.","PeriodicalId":450,"journal":{"name":"IEEE Transactions on Plasma Science","volume":"52 9","pages":"4619-4625"},"PeriodicalIF":1.3000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Plasma Science","FirstCategoryId":"101","ListUrlMain":"https://ieeexplore.ieee.org/document/10684976/","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, FLUIDS & PLASMAS","Score":null,"Total":0}
引用次数: 0

Abstract

The solid-state pulsed power generators (PPGs) are widely used in various modern industrial applications for their high repetition rate and long lifetime. The output characteristics of the generators are significantly affected by the dynamic characteristics of the semiconductor switches. Wide bandgap (WBG) semiconductor power devices, such as silicon carbide metal-oxide–semiconductor field-effect transistors (SiC MOSFETs), have the potential to structure solid-state PPGs due to many advantages, such as a high rated voltage, low ON-resistance, high operational temperature, and fast switching speed. Typically, these devices are used in series/parallel connections to enhance the power level of the generators. However, this approach often leads to increased parasitic inductance of the switching modules, which results in flattened rising edges of the output pulse and reduced power transmission efficiency. The chip-on-board (COB) packaging method exhibits excellent high-frequency performance by allowing current paths to be more flexible, which is suitable for constructing the power module. This article proposes a solid-state PPG with Blumlein pulse forming network (BPFN) and COB packaging SiC-based switching module. The switching module is based on a four-layer printed circuit board (PCB). SiC MOSFET bare dies, gate drivers, and auxiliary elements are directly soldered on the top layer of the PCB. Separate conducting layers are connected to the terminals of the switching module by vias, which provides extra flexibility in designing and enables the stray inductance of the power loop to be minimized to 5.14 nH by optimizing the current communication loops. A 5-kV prototype of the solid-state PPG is fabricated based on the designed switching module. Under a resistive load of $2.8~\Omega $ , a quasi-square pulse with a 62-ns pulsewidth and a 45-ns rise time can be obtained. Additionally, this generator has been tested at a 500-Hz repetition rate in the burst mode, and the di/dt of the switching module is about 80 A/ns, proving the effectiveness of the solid-state PPG.
基于碳化硅开关模块的板载芯片封装固态脉冲功率发生器
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Transactions on Plasma Science
IEEE Transactions on Plasma Science 物理-物理:流体与等离子体
CiteScore
3.00
自引率
20.00%
发文量
538
审稿时长
3.8 months
期刊介绍: The scope covers all aspects of the theory and application of plasma science. It includes the following areas: magnetohydrodynamics; thermionics and plasma diodes; basic plasma phenomena; gaseous electronics; microwave/plasma interaction; electron, ion, and plasma sources; space plasmas; intense electron and ion beams; laser-plasma interactions; plasma diagnostics; plasma chemistry and processing; solid-state plasmas; plasma heating; plasma for controlled fusion research; high energy density plasmas; industrial/commercial applications of plasma physics; plasma waves and instabilities; and high power microwave and submillimeter wave generation.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信