A Solid-State Pulsed Power Generator With Chip-on-Board Packaging SiC-Based Switching Module

IF 1.3 4区 物理与天体物理 Q3 PHYSICS, FLUIDS & PLASMAS
Diangeng Li;Zicheng Zhang;Jingming Gao;Yijie Sun;Juntao He
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Abstract

The solid-state pulsed power generators (PPGs) are widely used in various modern industrial applications for their high repetition rate and long lifetime. The output characteristics of the generators are significantly affected by the dynamic characteristics of the semiconductor switches. Wide bandgap (WBG) semiconductor power devices, such as silicon carbide metal-oxide–semiconductor field-effect transistors (SiC MOSFETs), have the potential to structure solid-state PPGs due to many advantages, such as a high rated voltage, low ON-resistance, high operational temperature, and fast switching speed. Typically, these devices are used in series/parallel connections to enhance the power level of the generators. However, this approach often leads to increased parasitic inductance of the switching modules, which results in flattened rising edges of the output pulse and reduced power transmission efficiency. The chip-on-board (COB) packaging method exhibits excellent high-frequency performance by allowing current paths to be more flexible, which is suitable for constructing the power module. This article proposes a solid-state PPG with Blumlein pulse forming network (BPFN) and COB packaging SiC-based switching module. The switching module is based on a four-layer printed circuit board (PCB). SiC MOSFET bare dies, gate drivers, and auxiliary elements are directly soldered on the top layer of the PCB. Separate conducting layers are connected to the terminals of the switching module by vias, which provides extra flexibility in designing and enables the stray inductance of the power loop to be minimized to 5.14 nH by optimizing the current communication loops. A 5-kV prototype of the solid-state PPG is fabricated based on the designed switching module. Under a resistive load of $2.8~\Omega $ , a quasi-square pulse with a 62-ns pulsewidth and a 45-ns rise time can be obtained. Additionally, this generator has been tested at a 500-Hz repetition rate in the burst mode, and the di/dt of the switching module is about 80 A/ns, proving the effectiveness of the solid-state PPG.
基于碳化硅开关模块的板载芯片封装固态脉冲功率发生器
固体脉冲电源以其高重复率和长寿命的特点在现代工业中得到了广泛的应用。半导体开关的动态特性对发电机的输出特性有很大影响。宽带隙(WBG)半导体功率器件,如碳化硅金属氧化物半导体场效应晶体管(SiC mosfet),由于具有许多优点,如高额定电压、低导通电阻、高工作温度和快速开关速度,具有构建固态PPGs的潜力。通常,这些设备用于串联/并联连接,以提高发电机的功率水平。然而,这种方法往往会导致开关模块的寄生电感增加,从而导致输出脉冲的上升沿变平,降低功率传输效率。芯片板上封装(COB)方法通过允许更灵活的电流路径,具有优异的高频性能,适合构建功率模块。本文提出了一种具有Blumlein脉冲形成网络(BPFN)和COB封装的基于sic的固态PPG开关模块。交换模块基于四层印刷电路板(PCB)。SiC MOSFET裸晶片、栅极驱动器和辅助元件直接焊接在PCB的顶层。单独的导电层通过过孔连接到开关模块的端子上,这为设计提供了额外的灵活性,并通过优化电流通信回路,使功率回路的杂散电感降至5.14 nH。基于所设计的开关模块,制作了固态PPG的5kv样机。在$2.8~\Omega $的阻性负载下,可获得脉冲宽度为62 ns、上升时间为45 ns的准方形脉冲。此外,该发生器在突发模式下进行了500 hz重复频率的测试,开关模块的di/dt约为80 a /ns,证明了固态PPG的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Transactions on Plasma Science
IEEE Transactions on Plasma Science 物理-物理:流体与等离子体
CiteScore
3.00
自引率
20.00%
发文量
538
审稿时长
3.8 months
期刊介绍: The scope covers all aspects of the theory and application of plasma science. It includes the following areas: magnetohydrodynamics; thermionics and plasma diodes; basic plasma phenomena; gaseous electronics; microwave/plasma interaction; electron, ion, and plasma sources; space plasmas; intense electron and ion beams; laser-plasma interactions; plasma diagnostics; plasma chemistry and processing; solid-state plasmas; plasma heating; plasma for controlled fusion research; high energy density plasmas; industrial/commercial applications of plasma physics; plasma waves and instabilities; and high power microwave and submillimeter wave generation.
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