High-Performance UV Detector Using Al-Doped ZnO Phototransistor Prepared by Initiated-CVD Doping Technique

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-25 DOI:10.1109/TED.2024.3481208

Jongsu Baek;Heetae Kim;Dongbin Kim;Yoonho Choi;Yongki Kim;Youngbin Yoon;Min Ju Kim;Myunghun Shin;Byung Jin Cho

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引用次数: 0

Abstract

A novel doping technique with an initiated chemical vapor deposition (iCVD) process is applied to fabricate aluminum (Al)-doped zinc oxide (ZnO) channel thin-film ultraviolet (UV) phototransistor (PT). The iCVD doping technique can successfully introduce Al throughout the ZnO channel without any surface damage. The sub-bandgap states mainly due to oxygen vacancy (VO) defects in the ZnO channel are effectively suppressed by Al doping; the subthreshold swing (SS) of the PT has been reduced by more than half to 168 mV/dec and under negative gate bias illumination stress, the threshold voltage shift is reduced by about half to −2.03 V, which improves the reliability. For the UV detection, the Al-doped ZnO PT exhibits a high responsivity of 358.93 A

$\cdot $

W−1, an ultrahigh UV-to-visible rejection ratio of

$4.81\times 10^{{6}}$

, a high detectivity (

${D} ^{\ast } $

) of

$1.68\times 10^{{15}}$

Jones, a low noise equivalent power (NEP) of

$2.98\times 10^{-{18}}$

$\cdot $

Hz−1, and fast switching performance. The developed Al-doped ZnO PT can be used in low-cost and high-performed UV detection for various applications.

查看原文本刊更多论文

用cvd掺杂技术制备al掺杂ZnO光电晶体管的高性能紫外探测器

采用化学气相沉积（iCVD）技术制备了铝（Al）掺杂氧化锌（ZnO）通道薄膜紫外光电晶体管（PT）。iCVD掺杂技术可以成功地在ZnO沟道中引入Al，而不会造成任何表面损伤。Al掺杂有效抑制了ZnO通道中主要由氧空位（VO）缺陷引起的亚带隙态；PT的亚阈值摆幅（SS）降低了一半以上，达到168 mV/dec，在负栅极偏置照明应力下，阈值电压漂移降低了约一半，达到- 2.03 V，提高了可靠性。对于紫外检测，al掺杂ZnO PT具有358.93 a $\cdot $ W−1的高响应率、4.81\ × 10^{{6}}$的超高紫外可见光抑制比、1.68\ × 10^{{15}}$ Jones的高探测率、2.98\ × 10^{-{18}}$ W $\cdot $ Hz−1的低噪声等效功率（NEP）和快速切换性能。所研制的al掺杂ZnO PT可用于各种低成本、高性能的紫外检测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.