1200-V Trench-FS IGBT: Process-Based Modeling and Short-Circuit Safe Operating Area (SCSOA) Optimization With the TOPSIS Method

Abstract

Power electronics are widely used in new energy vehicles, photovoltaics, and other fields. Its robustness has been concerned, and short-circuit robustness is an essential part of it, which is worth in-depth research. In this work, a 1200-V Trench-field-stop (FS) insulated-gate bipolar transistor (IGBT) was focused on for its short-circuit safe operating area (SCSOA) capability analysis. First, a model based on the actual process flow was set up, aligned with the scanning electron microscope (SEM) results, with the discrepancy between its static and dynamic electrical characteristics controlled within 5% and 12%, respectively. Subsequently, two primary failure modes and mechanisms of the device under test (DUT) under short-circuit conditions were identified, analyzed through TCAD modeling, and verified through actual short-circuit tests. Finally, the Technique for Order of Preference by Similarity to Ideal Solution (TOPSIS) method for multiple-criteria decision-making (MCDM) was applied to optimize the SCSOA, enhancing the short-circuit robustness of the device by 4% with minimal loss to other electrical performances.