A Meshless Method for Trajectory Simulation of Charged Particles in Static Axisymmetric Electric and Magnetic Fields

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-23 DOI:10.1109/TED.2024.3478198

Pengbo Wang;Fan Yang;Xuan Liu

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引用次数: 0

Abstract

The meshless method has strong abilities for conformal modeling and multiphysics coupling. This study pioneers the application of the meshless local Petrov-Galerkin (MLPG) method in the trajectory simulation of charged particles in static axisymmetric electric and magnetic fields, enhancing simulation accuracy and simplifying the treatment of multiphysics coupling issues. The MLPG method is introduced to solve the electric field. Then the field mapping between the electric field and electron trajectories can be easily realized by combining the node sets, which are used to discretize the problem domain and the electron trajectories. In the mapping process, a simple interface processing technique is also proposed. The numerical experiments indicate that the MLPG method has a higher accuracy than the traditional finite difference method (FDM) and finite element method (FEM) under the same element size. The proposed meshless-based method is also verified by analyzing the magnetron injection gun (MIG) of an 800 GHz gyrotron and comparing the results with the particle-in-cell (PIC) simulation.

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静态轴对称电场和磁场中带电粒子轨迹模拟的无网格方法

该方法具有较强的保形建模能力和多物理场耦合能力。本研究首次将无网格局部Petrov-Galerkin （MLPG）方法应用于静态轴对称电场和磁场中带电粒子的轨迹模拟，提高了模拟精度，简化了多物理场耦合问题的处理。介绍了求解电场的MLPG法。然后结合节点集实现电场与电子轨迹之间的场映射，将问题域与电子轨迹离散化。在映射过程中，还提出了一种简单的接口处理技术。数值实验表明，在相同单元尺寸下，MLPG法比传统的有限差分法（FDM）和有限元法（FEM）精度更高。通过对800 GHz回旋管的磁控管喷射枪（MIG）进行分析，并与粒子池（PIC）仿真结果进行比较，验证了该方法的有效性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.