{"title":"Reflections in Traveling Wave Tubes: Simulation Using the 1-D Time-Domain Hamiltonian Model DIMOHA With Experimental Validation","authors":"Khalil Aliane;Frédéric André;Yves Elskens","doi":"10.1109/TED.2024.3474611","DOIUrl":null,"url":null,"abstract":"DIMOHA is a many-particle time-domain model offering a good balance between exhaustive physics and time efficiency. We apply this model to study the effects of defects and reflections in the slow wave structure (SWS) of a traveling wave tube (TWT). To assess DIMOHA’s validity, we set up a TWT with varying reflection coefficients at the tube’s end. A ripple effect in saturated output power with respect to frequency is measured and simulated self-consistently with a rough agreement.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7818-7823"},"PeriodicalIF":2.9000,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10735789/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
DIMOHA is a many-particle time-domain model offering a good balance between exhaustive physics and time efficiency. We apply this model to study the effects of defects and reflections in the slow wave structure (SWS) of a traveling wave tube (TWT). To assess DIMOHA’s validity, we set up a TWT with varying reflection coefficients at the tube’s end. A ripple effect in saturated output power with respect to frequency is measured and simulated self-consistently with a rough agreement.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.