{"title":"Enhanced Performance of NiO/β-Ga₂O₃ Heterojunction Photodetector via Piranha Treatment and Its Application to Solar-Blind Communication","authors":"Hao Chen;Xiaoli Lu;Zeyulin Zhang;Dinghe Liu;Wei Wei;Yiru Yan;Liru Zeng;Dazheng Chen;Qian Feng;Hong Zhou;Jincheng Zhang;Chunxiang Zhu;Chunfu Zhang;Yue Hao","doi":"10.1109/TED.2024.3479161","DOIUrl":null,"url":null,"abstract":"In this work, we demonstrated a high-performance NiO/\n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n-Ga2O3 heterojunction photodetector using piranha solution pretreatment technology. After treatment, the NiO/\n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n-Ga2O3 heterojunction exhibited an excellent electrical performance, including a higher on/off ratio of \n<inline-formula> <tex-math>$1\\times 10^{{7}}$ </tex-math></inline-formula>\n, a lower reverse current of 0.28 pA, and an improved ideal factor. Additionally, the solar-blind detection performance of treated sample was significantly enhanced, including a 2900% increase in photo-to-dark-current ratio (PDCR), a 140% increase in responsivity, and a 900% increase in detectivity. Notably, excellent rise time and decay time were observed to be 60 and 50 ms after treatment, demonstrating an impressive reduction of 97% and 98%, respectively. This fast response characteristic has a wide range of applications. Thus, we conducted an optical communication test based on an original solar-blind communication system. Data transmission was successfully achieved ten times with a short sampling time of 100 ms. These results illustrate the effectiveness of piranha solution pretreatment in elevating the performance of Ga2O3-based heterojunction photodetector.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7752-7757"},"PeriodicalIF":2.9000,"publicationDate":"2024-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10735779/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we demonstrated a high-performance NiO/
$\beta $
-Ga2O3 heterojunction photodetector using piranha solution pretreatment technology. After treatment, the NiO/
$\beta $
-Ga2O3 heterojunction exhibited an excellent electrical performance, including a higher on/off ratio of
$1\times 10^{{7}}$
, a lower reverse current of 0.28 pA, and an improved ideal factor. Additionally, the solar-blind detection performance of treated sample was significantly enhanced, including a 2900% increase in photo-to-dark-current ratio (PDCR), a 140% increase in responsivity, and a 900% increase in detectivity. Notably, excellent rise time and decay time were observed to be 60 and 50 ms after treatment, demonstrating an impressive reduction of 97% and 98%, respectively. This fast response characteristic has a wide range of applications. Thus, we conducted an optical communication test based on an original solar-blind communication system. Data transmission was successfully achieved ten times with a short sampling time of 100 ms. These results illustrate the effectiveness of piranha solution pretreatment in elevating the performance of Ga2O3-based heterojunction photodetector.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.