Enhanced Performance of NiO/β-Ga₂O₃ Heterojunction Photodetector via Piranha Treatment and Its Application to Solar-Blind Communication

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hao Chen;Xiaoli Lu;Zeyulin Zhang;Dinghe Liu;Wei Wei;Yiru Yan;Liru Zeng;Dazheng Chen;Qian Feng;Hong Zhou;Jincheng Zhang;Chunxiang Zhu;Chunfu Zhang;Yue Hao
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Abstract

In this work, we demonstrated a high-performance NiO/ $\beta $ -Ga2O3 heterojunction photodetector using piranha solution pretreatment technology. After treatment, the NiO/ $\beta $ -Ga2O3 heterojunction exhibited an excellent electrical performance, including a higher on/off ratio of $1\times 10^{{7}}$ , a lower reverse current of 0.28 pA, and an improved ideal factor. Additionally, the solar-blind detection performance of treated sample was significantly enhanced, including a 2900% increase in photo-to-dark-current ratio (PDCR), a 140% increase in responsivity, and a 900% increase in detectivity. Notably, excellent rise time and decay time were observed to be 60 and 50 ms after treatment, demonstrating an impressive reduction of 97% and 98%, respectively. This fast response characteristic has a wide range of applications. Thus, we conducted an optical communication test based on an original solar-blind communication system. Data transmission was successfully achieved ten times with a short sampling time of 100 ms. These results illustrate the effectiveness of piranha solution pretreatment in elevating the performance of Ga2O3-based heterojunction photodetector.
食人鱼处理增强NiO/β-Ga₂O₃异质结光电探测器性能及其在日盲通信中的应用
在这项工作中,我们展示了一种高性能的NiO/ $\beta $ -Ga2O3异质结光电探测器,采用食人鱼溶液预处理技术。经过处理后,NiO/ $\beta $ -Ga2O3异质结表现出优异的电学性能,包括较高的通断比($1\ × 10^{{7}}$)、较低的反向电流(0.28 pA)和改善的理想因子。此外,处理后的样品的太阳盲检测性能得到了显著提高,其中光暗比(PDCR)提高了2900%,响应率提高了140%,探测率提高了900%。值得注意的是,治疗后的上升时间和衰减时间分别为60 ms和50 ms,分别减少了97%和98%。这种快速响应特性具有广泛的应用范围。因此,我们在原始的太阳盲通信系统的基础上进行了光通信测试。数据传输成功10次,采样时间短,仅为100 ms。这些结果说明了水虎鱼溶液预处理在提高ga2o3基异质结光电探测器性能方面的有效性。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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