Narrowband Longitudinal Leaky Surface Acoustic Wave Devices on LiTaO3/SiO2/SiC Hetero-Structure With Q Over 2000

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zongqin Sun;Sulei Fu;Shuai Zhang;Peisen Liu;Boyuan Xiao;Baichuan Li;Zhibin Xu;Weibiao Wang;Yu Guo
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引用次数: 0

Abstract

In the rapidly evolving fifth-generation (5G) communication system, there is an urgent need for high-performance surface acoustic wave (SAW) filters to address challenges such as frequency band congestion and smaller gaps between adjacent frequency bands. In this study, we focused on investigating longitudinal leaky SAW (LLSAW) devices based on the LiTaO3/SiO2/SiC hetero-structure, specifically designed for narrowband applications. A comprehensive analysis of the intrinsic electromechanical coupling coefficients ( ${K} ^{{2}}_{\textit {ij}}$ ) of shear horizontal SAW (SH-SAW) and LLSAW on LiTaO3 (LT) thin films was conducted. Via carefully adjusting the LT cut angle $\theta $ and propagation angle $\psi $ , strong excitation of LLSAWs was achieved. Through elaborated parameter optimization, LLSAW resonators were fabricated based on a $50^{\circ }{Y}$ - ${45}^{\circ }{X}$ LT/SiO2/SiC platform, demonstrating excellent performance on frequencies and quality factors (Q). These resonators exhibited small effective electromechanical coupling coefficients ( ${K}_{\text {eff}}^{{2}}$ ) ranging from 4.6% to 5.9% and scalable resonance frequencies ranging from 2887 to 6050 MHz. In addition, a high maximum Bode-Q of 2121 was attained. Finally, filters were numerically simulated using LLSAW resonators and a narrowband filter with fractional bandwidth (FBW) of 2.3% and minimum insertion loss (ILmin) of 1.4 dB was successfully fabricated. The developed LT/SiO2/SiC structure emerges a great prospect of high-performance narrowband applications in the 5G era.
Q > 2000的LiTaO3/SiO2/SiC异质结构窄带纵漏表面声波器件
在快速发展的第五代(5G)通信系统中,迫切需要高性能表面声波(SAW)滤波器来解决频带拥塞和相邻频带之间较小间隙等挑战。在这项研究中,我们重点研究了基于LiTaO3/SiO2/SiC异质结构的纵向泄漏SAW (LLSAW)器件,专门用于窄带应用。综合分析了LiTaO3 (LT)薄膜上剪切水平SAW (SH-SAW)和LLSAW的本征机电耦合系数(${K} ^{{2}}_{\textit {ij}}$)。通过精心调整LT切割角$\theta $和传播角$\psi $,实现了llsaw的强激发。通过详细的参数优化,基于$50^{\circ }{Y}$ - ${45}^{\circ }{X}$ LT/SiO2/SiC平台制备了LLSAW谐振器,在频率和质量因子(Q)上表现出优异的性能,这些谐振器具有较小的有效机电耦合系数(${K}_{\text {eff}}^{{2}}$),范围为4.6% to 5.9% and scalable resonance frequencies ranging from 2887 to 6050 MHz. In addition, a high maximum Bode-Q of 2121 was attained. Finally, filters were numerically simulated using LLSAW resonators and a narrowband filter with fractional bandwidth (FBW) of 2.3% and minimum insertion loss (ILmin) of 1.4 dB was successfully fabricated. The developed LT/SiO2/SiC structure emerges a great prospect of high-performance narrowband applications in the 5G era.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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