4.15 kV/4.6 mΩ⋅cm² 4H-SiC Epi-Refilled Super-Junction Schottky Diode With Ring Assisted Super-Junction Termination Extension

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI:10.1109/LED.2024.3479886

Haoyuan Cheng;Hengyu Wang;Ce Wang;Jiangbin Wan;Chi Zhang;Kuang Sheng

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引用次数: 0

Abstract

In this letter, 4H-SiC super-junction (SJ) Schottky diodes (SBDs) with hexagonal cell were fabricated by trench etching and epi-regrowth process. Quasi-selective epi-regrowth in hexagonal trenches and high aspect ratio of 6 for P-pillars without voids were achieved. Furthermore, a termination with field limiting ring assisted super-junction termination extension (RA-SJTE) was proposed and adopted to suppress the high electric field around the device edge. With such a termination, the breakdown voltage (BV) significantly increases from 1530 V to 4150 V (92% of the TCAD simulation value). The specific on-resistance (

${R}_{\text {ON,sp}}\text {)}$

of the fabricated device is 4.6 m

$\Omega \cdot $

cm2, demonstrating a performance higher than the one-dimensional limit of 4H-SiC unipolar devices. These results show the promising future of high-performance 4H-SiC SJ device for multi-kilovolts application.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.