Investigation of Dynamic Eₒₛₛ in p-GaN Gate AlGaN/GaN HEMT

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-10 DOI:10.1109/LED.2024.3477605

Yifei Huang;Qimeng Jiang;Yixu Yao;Sen Huang;Xinhua Wang;Xinyu Liu

引用次数: 0

Abstract

Dynamic

${E}_{\text {OSS}}$

of Schottky p-GaN gate GaN devices is investigated by a proposed novel circuit. The easy-to-implement circuit allows for the analysis of dynamic

${E}_{\text {OSS}}$

under different stress types, varied stress times and temperatures. It is observed that, the

${E}_{\text {OSS}}$

is significantly reduced when the device is under continuous hard-switching stress (HSW) compared to devices subjected to OFF-state high voltage drain stress (HDC) and fresh devices, especially under relatively low bus voltage conditions (e.g., 100 V). These findings, linked to the dynamic change of 2DEG, provide new insights into Schottky p-GaN gate HEMT behavior and application understanding.

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p-GaN栅AlGaN/GaN HEMT中动态Eₒₛₛ的研究

本文研究了肖特基p-GaN栅极GaN器件的动态${E}_{\text {OSS}}$。易于实现的电路允许在不同应力类型，不同应力时间和温度下分析动态${E}_{\text {OSS}}$。研究发现，与处于off状态高压漏极应力（HDC）和新鲜器件相比，器件在连续硬开关应力（HSW）下，特别是在相对较低的母线电压条件下（例如100 V），器件的${E}_{\text {OSS}}$显著降低。这些发现与2DEG的动态变化有关，为Schottky p-GaN栅极HEMT行为和应用理解提供了新的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.