Investigation of Dynamic Eₒₛₛ in p-GaN Gate AlGaN/GaN HEMT

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-10 DOI:10.1109/LED.2024.3477605

Yifei Huang;Qimeng Jiang;Yixu Yao;Sen Huang;Xinhua Wang;Xinyu Liu

引用次数: 0

Abstract

Dynamic

${E}_{\text {OSS}}$

of Schottky p-GaN gate GaN devices is investigated by a proposed novel circuit. The easy-to-implement circuit allows for the analysis of dynamic

${E}_{\text {OSS}}$

under different stress types, varied stress times and temperatures. It is observed that, the

${E}_{\text {OSS}}$

is significantly reduced when the device is under continuous hard-switching stress (HSW) compared to devices subjected to OFF-state high voltage drain stress (HDC) and fresh devices, especially under relatively low bus voltage conditions (e.g., 100 V). These findings, linked to the dynamic change of 2DEG, provide new insights into Schottky p-GaN gate HEMT behavior and application understanding.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.