High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI:10.1109/LED.2024.3478819

Siheng Chen;Peng Cui;Xin Luo;Liu Wang;Jiacheng Dai;Kaifa Qi;Tieying Zhang;Handoko Linewih;Zhaojun Lin;Xiangang Xu;Jisheng Han

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引用次数: 0

Abstract

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition. Due to the thermal oxidation treatment, a smooth oxide interlayer between P-GaN and Al

$_{\mathbf {{2}}}$

$_{\mathbf {{3}}}$

is formed. Compared with the device without treatment, the P-GaN gate HEMTs with OTALD present increased threshold voltage significantly from 1.8 V to 7.1 V and improved gate breakdown voltage from 18.9 V to 26.9 V. Additionally, the devices maintained a high on/off current ratio above

$10^{\mathbf {{8}}}$

and a further improvement in off-state breakdown voltage from 1315 V to 1980 V. The record high threshold voltage and breakdown voltage make this technology promising for widespread application in P-GaN power devices.

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阈值电压为7.1 V的高击穿电压P-GaN栅极hemt

在这项研究中，我们提出了一种增强模式P-GaN/AlGaN/GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMTs），将P-GaN的热氧化处理与栅极金属沉积（OTALD）相结合。由于热氧化处理，P-GaN与Al $_{\mathbf {{2}}}$ O $_{\mathbf{{3}}}$之间形成光滑的氧化中间层。与未经处理的器件相比，经OTALD处理的P-GaN栅极hemt的阈值电压从1.8 V显著提高到7.1 V，栅极击穿电压从18.9 V提高到26.9 V。此外，器件保持了高于$10^{\mathbf{{8}}}$的高通断电流比，并进一步提高了断开状态击穿电压，从1315 V提高到1980 V。创纪录的高阈值电压和击穿电压使该技术在P-GaN功率器件中具有广泛的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.