High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI:10.1109/LED.2024.3478819

Siheng Chen;Peng Cui;Xin Luo;Liu Wang;Jiacheng Dai;Kaifa Qi;Tieying Zhang;Handoko Linewih;Zhaojun Lin;Xiangang Xu;Jisheng Han

{"title":"High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V","authors":"Siheng Chen;Peng Cui;Xin Luo;Liu Wang;Jiacheng Dai;Kaifa Qi;Tieying Zhang;Handoko Linewih;Zhaojun Lin;Xiangang Xu;Jisheng Han","doi":"10.1109/LED.2024.3478819","DOIUrl":null,"url":null,"abstract":"In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition. Due to the thermal oxidation treatment, a smooth oxide interlayer between P-GaN and Al\n<inline-formula> <tex-math>$_{\\mathbf {{2}}}$ </tex-math></inline-formula>\nO\n<inline-formula> <tex-math>$_{\\mathbf {{3}}}$ </tex-math></inline-formula>\n is formed. Compared with the device without treatment, the P-GaN gate HEMTs with OTALD present increased threshold voltage significantly from 1.8 V to 7.1 V and improved gate breakdown voltage from 18.9 V to 26.9 V. Additionally, the devices maintained a high on/off current ratio above \n<inline-formula> <tex-math>$10^{\\mathbf {{8}}}$ </tex-math></inline-formula>\n and a further improvement in off-state breakdown voltage from 1315 V to 1980 V. The record high threshold voltage and breakdown voltage make this technology promising for widespread application in P-GaN power devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2343-2346"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10714373/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition. Due to the thermal oxidation treatment, a smooth oxide interlayer between P-GaN and Al

$_{\mathbf {{2}}}$

$_{\mathbf {{3}}}$

is formed. Compared with the device without treatment, the P-GaN gate HEMTs with OTALD present increased threshold voltage significantly from 1.8 V to 7.1 V and improved gate breakdown voltage from 18.9 V to 26.9 V. Additionally, the devices maintained a high on/off current ratio above

$10^{\mathbf {{8}}}$

and a further improvement in off-state breakdown voltage from 1315 V to 1980 V. The record high threshold voltage and breakdown voltage make this technology promising for widespread application in P-GaN power devices.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.