Research on Hybrid Bonding Process of Micro-LED Preparation Based on Asymmetric Structure

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-25 DOI:10.1109/LED.2024.3486568

Luqiao Yin;Jianxin Li;Zhu Yang;Xiaoxiao Ji;Haojie Zhou;Jianhua Zhang

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Abstract

In this letter, we propose a hybrid bonding process for the preparation of micro-light-emitting diode (Micro-LED) based on asymmetric structures. This process employs a bonding system comprised of metal and photopolymer. The asymmetric structure is formed by utilizing a blue film to selectively remove the metal from the photoresist after the metal has been evaporated. Cross-sectional observation of the Micro-LED after bonding reveals that effective filling can be achieved. Consequently, compared to the symmetrical structure process, the steps of spin coating the polymer and chemical mechanical polishing (CMP) on both sides are omitted, greatly simplifying the process. Tests indicate that the Micro-LED device manufactured using this method exhibits excellent electrical and optical properties, with a bonding strength of 17.1 MPa, which is 73.6% greater than that of bump bonding. Furthermore, the asymmetric structure mitigates the sliding issues associated with joining symmetric structures and enhances pixel isolation, thereby improving bonding accuracy. It is crucial for increasing the yield and reducing the cost of Micro-LED in terms of commercialization.

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基于非对称结构的微型led复合键合工艺研究

在这篇文章中，我们提出了一种基于非对称结构制备微型发光二极管（Micro-LED）的混合键合工艺。该工艺采用由金属和光聚合物组成的键合系统。在金属蒸发后，利用蓝色薄膜选择性地从光刻胶中去除金属，形成不对称结构。对粘接后的Micro-LED进行横断面观察，发现可以实现有效填充。因此，与对称结构工艺相比，省去了聚合物自旋涂层和两侧化学机械抛光（CMP）的步骤，大大简化了工艺。实验表明，该方法制备的Micro-LED器件具有优异的电学和光学性能，键合强度为17.1 MPa，比凹凸键合强度提高73.6%。此外，非对称结构减轻了与连接对称结构相关的滑动问题，并增强了像素隔离，从而提高了连接精度。这对于提高Micro-LED的成品率和降低其商业化成本至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.