Mg-Ion-Based Electrochemical Synapse With Superior Retention

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI:10.1109/LED.2024.3479248

Heebum Kang;Kyumin Lee;Seungkwon Hwang;Hyunsang Hwang

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引用次数: 0

Abstract

We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (

$\sigma _{\text {ion}}\text {)}$

and low electrical conductivity (

$\sigma \text {)}$

. Additionally, crystalline WO

$_{{2}.{8}}$

(C-WO

$_{{2}.{8}}\text {)}$

is used as the channel material because of its excellent ion diffusivity (D

$_{\text {ion}}\text {)}$

. Comprehensively, our findings reveal nearly perfect weight update linearity and exceptional retention capabilities, lasting approximately six years. These results indicate that Mg-ions are suitable for ECRAM systems, offering desirable and dependable synaptic properties. Moreover, the physical intercalation of Mg-ions into the WO

$_{{2}.{8}}$

channel is confirmed in real-time by the sequential modulation of Raman peaks, which correspond to the levels of potentiation or depression.

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具有优异保留率的镁离子基电化学突触

我们介绍了一种新型的全固态mg离子基电化学RAM (Mg-ECRAM)，它利用高度稳定的MgF2电解质，以其高离子电导率（$\sigma _{\text {ion}}\text{）}$和低电导率（$\sigma \text{）}$而闻名。此外，结晶WO $_{{2}。{2}}$ (c - o $ {{2}；{8}}\text{)}$被用作通道材料是因为它具有优异的离子扩散率（D $_{\text {ion}}\text{）}$。综合而言，我们的研究结果揭示了近乎完美的权重更新线性和卓越的保留能力，持续了大约六年。这些结果表明，镁离子适合于ECRAM系统，提供理想和可靠的突触特性。此外，mmg离子在WO ${{2}中的物理插层。{8}}$通道通过拉曼峰的顺序调制实时确认，这些拉曼峰对应于增强或抑制的水平。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.