{"title":"Mg-Ion-Based Electrochemical Synapse With Superior Retention","authors":"Heebum Kang;Kyumin Lee;Seungkwon Hwang;Hyunsang Hwang","doi":"10.1109/LED.2024.3479248","DOIUrl":null,"url":null,"abstract":"We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (\n<inline-formula> <tex-math>$\\sigma _{\\text {ion}}\\text {)}$ </tex-math></inline-formula>\n and low electrical conductivity (\n<inline-formula> <tex-math>$\\sigma \\text {)}$ </tex-math></inline-formula>\n. Additionally, crystalline WO\n<inline-formula> <tex-math>$_{{2}.{8}}$ </tex-math></inline-formula>\n (C-WO\n<inline-formula> <tex-math>$_{{2}.{8}}\\text {)}$ </tex-math></inline-formula>\n is used as the channel material because of its excellent ion diffusivity (D\n<inline-formula> <tex-math>$_{\\text {ion}}\\text {)}$ </tex-math></inline-formula>\n. Comprehensively, our findings reveal nearly perfect weight update linearity and exceptional retention capabilities, lasting approximately six years. These results indicate that Mg-ions are suitable for ECRAM systems, offering desirable and dependable synaptic properties. Moreover, the physical intercalation of Mg-ions into the WO\n<inline-formula> <tex-math>$_{{2}.{8}}$ </tex-math></inline-formula>\n channel is confirmed in real-time by the sequential modulation of Raman peaks, which correspond to the levels of potentiation or depression.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2557-2560"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10716487/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We introduce a novel all-solid-state Mg-ion-based electrochemical RAM (Mg-ECRAM) that utilizes a highly stable MgF2 electrolyte known for its high ionic conductivity (
$\sigma _{\text {ion}}\text {)}$
and low electrical conductivity (
$\sigma \text {)}$
. Additionally, crystalline WO
$_{{2}.{8}}$
(C-WO
$_{{2}.{8}}\text {)}$
is used as the channel material because of its excellent ion diffusivity (D
$_{\text {ion}}\text {)}$
. Comprehensively, our findings reveal nearly perfect weight update linearity and exceptional retention capabilities, lasting approximately six years. These results indicate that Mg-ions are suitable for ECRAM systems, offering desirable and dependable synaptic properties. Moreover, the physical intercalation of Mg-ions into the WO
$_{{2}.{8}}$
channel is confirmed in real-time by the sequential modulation of Raman peaks, which correspond to the levels of potentiation or depression.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.