Low-Temperature Deuterium Annealing for HfO₂/SiO₂ Gate Dielectric in Silicon MOSFETs

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Tae-Hyun Kil;Ju-Won Yeon;Hyo-Jun Park;Moon-Kwon Lee;Eui-Cheol Yun;Min-Woo Kim;Sang-Min Kang;Jun-Young Park
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引用次数: 0

Abstract

In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical conditions is conducted to evaluate the specific impact of deuterium (D2). Comprehensive DC characterizations and evaluations of stress immunity under hot-carrier injection (HCI) and positive bias stress (PBS) conditions, are performed. The results confirm that even at a low temperature of 300 °C, D2 has a more substantial effect on device performance and reliability compared to H2. This study provides a guideline for reducing the annealing temperature in the fabrication of HKMG MOSFETs.
硅mosfet中hfo2 / sio2栅介电介质的低温氘退火
在这项研究中,提出了300°C低温氘退火(LTDA)来提高硅基高k金属栅极(HKMG) mosfet的性能和可靠性。在相同条件下,与氢(H2)退火进行了对比研究,以评估氘(D2)的比影响。在热载流子注入(HCI)和正偏置应力(PBS)条件下,进行了全面的DC表征和应力免疫评估。结果证实,即使在300°C的低温下,D2对器件性能和可靠性的影响也比H2更大。该研究为降低HKMG mosfet的退火温度提供了指导。
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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