L-Band Diamond Amplifier With Multi-Finger Structure

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-15 DOI:10.1109/LED.2024.3480138

Ken Kudara;Yuji Komatsuzaki;Yutaro Yamaguchi;Shintaro Shinjo;Masakazu Arai;Hiroshi Kawarada

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引用次数: 0

Abstract

This letter reports on an L-band diamond amplifier with a multi-finger structure. The

$0.5~\mu $

m gate length two-dimensional hole gas diamond field-effect transistor, utilizing a multi-finger structure with a total gate width of 10 finger

$\times 100~\mu $

m, aims to enhance high-frequency performance due to low gate resistance compared to a double-finger structure. It demonstrates large-signal operation over 2 GHz with a total gate width of more than 1 mm, marking a first in diamond field-effect transistor. The development of this amplifier was achieved using an atomic layer deposition two-dimensional hole gas diamond metal-oxide-semiconductor field-effect transistor, using a multi-finger structure with a total gate width of 10 finger

$\times 50~\mu $

m, alongside printed circuit board and surface mount devices components. The resulting diamond amplifier exhibited linear gains of more than 7 dB and output power levels of 20.7 dBm, with maximum drain efficiency of 3.5 % achieved at 1.8 GHz, with drain voltage of −40 V. Among diamond amplifiers, this configuration demonstrated the highest output power performance.

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l波段金刚石多指结构放大器

这封信报告了一个多指结构的l波段钻石放大器。该栅极长度为0.5~\mu $ m的二维空穴气金刚石场效应晶体管采用多指结构，总栅极宽度为10 ~\mu $ m乘以100~\mu $ m，与双指结构相比，栅极电阻低，旨在提高高频性能。它演示了超过2ghz的大信号工作，总栅极宽度超过1mm，标志着金刚石场效应晶体管的第一个。该放大器的开发采用原子层沉积二维空穴气体金刚石金属氧化物半导体场效应晶体管，采用多指结构，总栅极宽度为10指× 50 μ m，与印刷电路板和表面贴装器件一起使用。该金刚石放大器的线性增益超过7 dB，输出功率水平为20.7 dBm，在1.8 GHz下的漏极效率为3.5%，漏极电压为- 40 V。在钻石放大器中，这种配置显示出最高的输出功率性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.