An ε -Ga₂O₃-Based Surface Acoustic Wave Resonator for Deep Ultraviolet Detection

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-16 DOI:10.1109/LED.2024.3480908

Jiahong Luo;Chenhong Huang;Yujia Tu;Zeyuan Fei;Zimin Chen;Weiqu Chen;Yanli Pei;Gang Wang;Xing Lu

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引用次数: 0

Abstract

$\varepsilon $

-phase gallium oxide (

$\varepsilon $

-Ga2O

$_{{3}}$

) semiconductor offers an excellent potential for fabricating surface acoustic wave photodetectors (SAW PDs) to detect deep ultraviolet (deep-UV) light, taking advantage of its combination of an ultra-wide bandgap of

$\sim ~4.9$

eV and a strong piezoelectric property. In this letter, we developed SAW deep-UV PDs in a single-port resonator topology using an

$\varepsilon $

- Ga2O3 thin film grown on sapphire substrates. The device exhibited two resonate frequencies at 1.39 and 2.33 GHz, corresponding to the propagation of Rayleigh and Sezawa waves. The frequency shifts of the Rayleigh mode signal to a 254-nm wavelength UV illumination were investigated and discussed. The

$\varepsilon $

-Ga2O3 SAW PDs in our study, yielding a competitive responsivity of 5.4 ppm

$\cdot (\mu $

W/cm

$^{{2}})^{\text {-1}}$

, were demonstrated to be suitable for deep-UV detection.

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基于ε -Ga₂O₃的深紫外探测表面声波谐振器

$\varepsilon $ -相氧化镓（$\varepsilon $ -Ga2O $_{{3}}$）半导体利用其$\sim ~4.9$ eV的超宽带隙和强大的压电特性，为制造表面声波光电探测器（SAW pd）探测深紫外（deep- uv）光提供了极好的潜力。在这封信中，我们使用在蓝宝石衬底上生长的$\varepsilon $ - Ga2O3薄膜，在单端口谐振腔拓扑中开发了SAW深紫外pd。该装置具有1.39 GHz和2.33 GHz两个共振频率，对应于瑞利波和Sezawa波的传播。研究并讨论了瑞利模式信号在波长254nm紫外光照射下的频移。在我们的研究中，$\varepsilon $ -Ga2O3 SAW pd具有5.4 ppm $\cdot (\mu $ W/cm $^{{2}})^{\text {-1}}$的竞争响应性，被证明适用于深紫外检测。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.