Experimental Results of the Novel 1.5-MW-Class 140-GHz Continuous-Wave Gyrotron for the Wendelstein 7-X Stellarator

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
S. Ponomarenko;H. P. Laqua;K. A. Avramidis;G. Gantenbein;J. Gontard;F. Hollmann;S. Illy;Z. C. Ioannidis;J. Jelonnek;J. Jin;S. Kohler;L. Krier;A. Leggieri;F. Legrand;G. Lietaer;C. Lievin;S. Marsen;D. Moseev;F. Noke;T. Rzesnicki;T. Stange;M. Thumm;R. C. Wolf
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Abstract

In this work, we present the achievements obtained during the commissioning phase of the newly developed 140-GHz continuous-wave tube TH1507U at the gyrotron test stand of the electron-cyclotron resonance heating facility of the Wendelstein 7-X stellarator. The gyrotron is based on the successful 1-MW class industrial TH1507 gyrotron, which operates in the TE $_{{28},{8}}$ mode, and has been optimized for operation in the higher-order TE $_{{28},{10}}$ mode. The 1-ms short-pulse tests confirmed the nominal output power of 1.5 MW. In a long-pulse operating regime, an output power of 1.3 MW with total efficiency 45.9% was demonstrated at pulse lengths of 3 minutes. Different regimes where the beam current is above 50 A demonstrated a saturation of output power at 1.3 MW, that can be explained by the presence of parasitic modes. A parasite-free operation with an output power of 1.2 MW was achieved with pulses up to 580 s in length. The pulse length was limited due to the existing capabilities of the cooling system at the test stand, and is foreseen to be extended in the future.
Wendelstein 7-X仿星器新型1.5 mw级140 ghz连续波回旋管实验结果
本文介绍了新研制的140 ghz连续波管TH1507U在Wendelstein 7-X仿星器电子回旋共振加热装置回旋管试验台调试阶段取得的成果。该回旋管基于成功的1兆瓦级工业TH1507回旋管,该回旋管工作在TE $_{{28},{8}}$模式下,并经过优化,可在高阶TE $_{{28},{10}}$模式下运行。1毫秒的短脉冲测试确认了标称输出功率为1.5 MW。在长脉冲工作状态下,脉冲长度为3分钟,输出功率为1.3 MW,总效率为45.9%。当光束电流大于50 A时,输出功率在1.3 MW时达到饱和,这可以通过寄生模式的存在来解释。脉冲长度为580s,输出功率为1.2 MW。由于试验台冷却系统的现有能力,脉冲长度受到限制,预计将来会延长。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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