p-GaN Gate HEMT-Based 2T1C for Active Matrix μLED Displays

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI:10.1109/LED.2024.3485914

Yaying Liu;Wenjun Huang;Jun Ma;Zhaojun Liu

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引用次数: 0

Abstract

This letter demonstrates an enhancement mode p-GaN gate HEMT-based 2T1C pixel circuit for active matrix (AM)

$\mu $

LED displays. The 2T1C pixel circuit consists of two p-GaN gate HEMTs serving as the switching and driving transistors and a metal-insulator-metal (MIM) capacitor. The p-GaN gate HEMT shows a threshold voltage of 0.7 V and can provide a maximum driving current of

$675~\mu $

A. An on-off ratio of 108 is achieved, with an off-state current less than 10 pA. For the capacitor, a 20 nm Al2O3 layer is used as the dielectric, and the measured capacitance density is 4 fF/

$\mu $

m2. The proposed 2T1C can drive a

$20~\mu $

$\mu $

LED under a scan rate of 120 Hz. The extracted rise time and fall time of the VOUT are

$15.75~\mu $

s and

$8.42~\mu $

s, respectively. In addition, the pulse amplitude modulation (PAM) of the 2T1C has been demonstrated, showing that the light intensity of the

$\mu $

LED can be modulated by the amplitude of the data signal.

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有源矩阵μLED显示用p-GaN栅极hemt - 2T1C

本文演示了一种用于有源矩阵（AM） LED显示屏的增强模式p-GaN栅极hemt - 2T1C像素电路。2T1C像素电路由两个p-GaN栅极hemt作为开关和驱动晶体管和一个金属-绝缘体-金属（MIM）电容器组成。p-GaN栅极HEMT的阈值电压为0.7 V，最大驱动电流为675~\mu $ a，通断比为108，关断电流小于10pa。电容器采用20nm Al2O3层作为介质，测得电容密度为4 fF/ $\mu $ m2。所提出的2T1C可以在120hz的扫描速率下驱动一个$20~ $ μ $ m $\ μ $ LED。提取的VOUT上升时间为$15.75~\mu $ s，下降时间为$8.42~\mu $ s。此外，还演示了2T1C的脉冲幅度调制（PAM），表明可以通过数据信号的幅度来调制$\mu $ LED的光强。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.