High-throughput exploration of stable semiconductors using deep learning and density functional theory

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Gege Min , Wenxu Wei , Qingyang Fan , Teng Wan , Ming Ye , Sining Yun
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引用次数: 0

Abstract

Semiconductors can lead to new applications and technological innovations. In this work, we developed a computational pipeline to discover new semiconductors by combining deep learning and high-throughput first-principles calculations. We used a random strategy combined with group and graph theory to generate initial boron nitride polymorphs and developed a classifier based on graph convolutional neural network to screen semiconductors and study their stability. We found 26 new stable boron nitride polymorphs in Pc phase, of which 3 are direct bandgap semiconductors, and 10 are quasi-direct bandgap semiconductors. This discovery not only expands the library of known semiconductor materials but also provides potential candidates for high-performance electronic and optoelectronic devices, paving the way for future technological advancements.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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