Uniformity and Reliability of Enhancement-Mode Polycrystalline Indium Oxide Thin Film Transistors Formed by Solid-Phase Crystallization

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-15 DOI:10.1109/LED.2024.3480991

Naoki Okamoto;Xiaoqian Wang;Kotaro Morita;Yuto Kato;Mir Mutakabbir Alom;Yusaku Magari;Mamoru Furuta

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引用次数: 0

Abstract

A bottom-gate thin-film transistor (TFT) with hydrogen-doped polycrystalline indium oxide (poly-InOx:H) channel was fabricated to investigate the uniformity and reliability of the TFT. The carrier density (

${N}_{\text {e}}\text {)}$

of the poly-InOx:H film markedly decreased after solid-phase crystallization in air at 300°C, and a nondegenerate poly-InOx:H film with

${N}_{\text {e}}$

${1}.{7}\times {10} ^{{17}}$

$^{-{3}}$

could be achieved. The TFT with a 30-nm-thick poly-InOx:H channel operated in enhancement mode (E-mode) after post-fabrication annealing at more than 300°C. The poly-InOx:H TFT exhibited good short-range uniformities with a field-effect mobility (

$\mu _{\text {FE}}\text {)}$

$32.0~\pm ~0.39$

(

$3\sigma \text {)}$

cm2/Vs and a threshold voltage (

${V}_{\text {t}}\text {)}$

$0.58~\pm ~0.18$

(

$3\sigma \text {)}$

V. Furthermore, no threshold voltage shift was observed under negative gate bias and temperature stress at 60°C for 6,000 s.

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固相结晶形成的增强型多晶氧化铟薄膜晶体管的一致性和可靠性

为了研究 TFT 的均匀性和可靠性，我们制作了一种具有氢掺杂多晶氧化铟（poly-InOx:H）沟道的底栅薄膜晶体管（TFT）。在 300°C 的空气中固相结晶后，聚氧化铟：H 薄膜的载流子密度（${N}_{text {e}}\text {）}$明显降低。^{{17}}$ cm $^{-{3}}$ 的薄膜。在超过 300°C 的制造后退火温度下，带有 30 纳米厚的聚氧化铟：H 沟道的 TFT 在增强模式（E 模式）下工作。聚 InOx:H TFT 表现出良好的短程均匀性，场效应迁移率（$\mu _\{text {FE}\text {）}$为 32.0~\pm ~0.39$ （$3\sigma \text {）}$ cm2/Vs，阈值电压（${V}_\{text {t}\text {）}$为 0.58~\pm ~0.18$ ( $3\sigma \text {)}$ V。此外，在负栅极偏压和 60°C 温度应力下持续 6,000 秒也没有观察到阈值电压偏移。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.