Low-Cost High-Performance p-GaSe/i-GeSn/n-GOI Heterojunction Photodiode for Visible to Short-Wave Infrared Multispectral Detection

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-14 DOI:10.1109/LED.2024.3480361

Jiaxin Qin;Xinwei Cai;Huiling Pan;Tianwei Yang;Songyan Chen;Wei Huang;Guangyang Lin;Cheng Li

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引用次数: 0

Abstract

In this work, a low-cost and high-performance p-GaSe/i-GeSn/n-Ge-on-insulator van der Waals (vdW) heterojunction photodetector (PD) is demonstrated with a Sn-composition-graded i-GeSn absorption region. Featuring a sputtering-grown Ge0.848 Sn0.152 top layer, the PD extends its cutoff wavelength beyond 2400 nm, simultaneously boosting its response to visible (VIS) light. This enhancement is achieved through using wide bandgap GaSe flake as the p-type region, resulting in a flat broadband photo-response spectrum from VIS to short-wave infrared (SWIR) bands. Moreover, an ultralow dark current density of 0.55 mA/cm2 is achieved owing to the large bandgap of GaSe and graded barriers within the GeSn layers. The specific detectivity at 2000 nm reaches

${3.5}\times {10}^{{10}}$

Jones, alongside a rapid response time of

$49.5\mu $

s under −1 V bias at room temperature. These outcomes highlight the potential of the mixed-dimensional GeSn vdW heterojunction PD as a new pathway for low-cost multispectral detection ranging from VIS to SWIR wavelengths.

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用于可见光至短波红外多光谱检测的低成本高性能 p-GaSe/i-GeSn/n-GOI 异质结光电二极管

在这项研究中，我们展示了一种低成本、高性能的 p-GaSe/i-GeSn/n-Ge-on-insulator 范德瓦耳斯（vdW）异质结光电探测器（PD），它具有锡沉积分级 i-GeSn 吸收区。该光电二极管采用溅射生长的 Ge0.848 Sn0.152 顶层，将其截止波长扩展到 2400 纳米以上，同时增强了对可见光（VIS）的响应。这种增强是通过使用宽带隙片状 GaSe 作为 p 型区实现的，从而产生了从 VIS 到短波红外 (SWIR) 波段的平坦宽带光响应光谱。此外，由于 GaSe 的大带隙和 GeSn 层内的分级势垒，实现了 0.55 mA/cm2 的超低暗电流密度。在室温 -1 V 偏置下，2000 nm 的比检测率达到 ${3.5}\times {10}^{{10}$ Jones，快速响应时间为 $49.5\mu $ s。这些成果凸显了混合维 GeSn vdW 异质结 PD 作为从 VIS 到 SWIR 波长的低成本多光谱检测新途径的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.