Current density and thickness dependent anisotropic thermal conductivity of electroplated copper thin films

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-26 DOI:10.1016/j.mssp.2024.109152

Hongbang Zhang , Song Hu , Miao Tian , Xiaokun Gu

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Abstract

Electroplated copper thin films are essential in microelectronics, widely used for back-end interconnects, through-silicon vias, and redistribution layers. Currently, their thermal conductivity is frequently estimated indirectly using the four-point probe method and the Wiedemann-Franz law, with limited research on their anisotropy and influencing factors. In this paper, we report the measurements on the electrical and thermal properties of electroplated copper thin films under different current densities during plating and thicknesses using the four-point probe method and frequency-domain thermoreflectance. The results indicate that current density and film thickness significantly influence the microstructure of the copper thin films, resulting in pronounced anisotropy in thermal conductivity. Scanning electron microscopy and electron backscatter diffraction analyses further reveal the microstructural features responsible for this anisotropy and explain how current density affects the internal structure of electroplated copper films, impacting their thermal conductivity. These insights provide valuable theoretical guidance for designing and optimizing electroplated copper films in electronic applications.

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电镀铜薄膜的电流密度和随厚度变化的各向异性热导率

电镀铜薄膜是微电子技术中必不可少的材料，广泛用于后端互连、硅通孔和再分布层。目前，人们通常使用四点探针法和维德曼-弗兰茨定律间接估算其热导率，而对其各向异性和影响因素的研究却十分有限。本文利用四点探针法和频域热反射法测量了电镀铜薄膜在电镀过程中不同电流密度和不同厚度下的电学和热学特性。结果表明，电流密度和薄膜厚度对铜薄膜的微观结构有显著影响，从而导致热导率的明显各向异性。扫描电子显微镜和电子反向散射衍射分析进一步揭示了造成这种各向异性的微观结构特征，并解释了电流密度如何影响电镀铜薄膜的内部结构，从而影响其热导率。这些见解为设计和优化电子应用中的电镀铜薄膜提供了宝贵的理论指导。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.