Investigation of the growth temperature of AlGaAs barrier layer on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and AlGaAs single layer grown by molecular beam epitaxy (MBE)

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-22 DOI:10.1016/j.mssp.2024.109140

Simin Liu , Lin Shang , Shufang Ma , Bocang Qiu , Zhi Yang , Haitao Feng , Junzhao Zhang , Ruisi Cheng , Bo Li , Bingshe Xu

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Abstract

The effect of growth temperature on the crystal quality and optical properties of InGaAs/AlGaAs multiple quantum wells (MQWs) with AlGaAs barriers was studied. The AlGaAs layers and InGaAs/AlGaAs MQWs were grown using molecular beam epitaxy (MBE). High-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) were employed to assess the interface smoothness and optical properties of the materials. HRXRD analysis reveals that increasing barrier growth temperature can lead to the degradation of interface quality, as well as the decrease in the indium content and well thickness in InGaAs/AlGaAs MQWs. But the PL integral signal which is the integration of the PL spectral intensity, and represents the normalized photon number produced by the PL process increase instead. The AlGaAs single layer analysis reveals increasing temperature can increase its crystal quality and interfaces smoothness, leading to enhanced radiation recombination efficiency.

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研究 AlGaAs 阻挡层的生长温度对分子束外延 (MBE) 法生长的 InGaAs/AlGaAs 多量子阱和 AlGaAs 单层的光学和晶体质量的影响

研究了生长温度对带有 AlGaAs 势垒的 InGaAs/AlGaAs 多量子阱（MQW）的晶体质量和光学特性的影响。AlGaAs 层和 InGaAs/AlGaAs MQW 采用分子束外延 (MBE) 技术生长。高分辨率 X 射线衍射 (HRXRD) 和光致发光 (PL) 被用来评估材料的界面光滑度和光学特性。HRXRD 分析表明，阻挡层生长温度的升高会导致 InGaAs/AlGaAs MQWs 的界面质量下降、铟含量和阱厚度减少。但聚光积分信号（即聚光光谱强度的积分，代表聚光过程产生的归一化光子数）反而会增加。对 AlGaAs 单层的分析表明，温度升高可以提高其晶体质量和界面光滑度，从而提高辐射重组效率。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.